Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.0 to 75 V
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low-power voltage stabilizers or
voltage references.
handbook, 4 columns
PMLL5225B to PMLL5267B
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The series consists of 43 types with nominal working
voltages from 3.0 to 75 V.
k
a
MAM215
The cathode is indicated by a yellow band.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 8.3 ms; square wave;
T
j
≤
55
°C
prior to surge
T
stg
T
j
Note
1. If flanges are kept at T
flange
≤
75
°C.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 200 mA; see Fig.4
MIN.
−
MAX.
1.1
V
UNIT
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−65
−65
500
40
10
+200
+200
mW
W
W
°C
°C
1996 Apr 26
2
1996 Apr 26
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
R
TYPE No.
MAX.
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
1.7
35
1.8
35
2.0
35
0.1
0.1
0.1
2.1
40
0.1
2.2
40
0.1
2.5
40
0.1
2.7
40
0.1
36.0
39.0
43.0
46.0
47.0
52.0
56.0
3.0
40
0.1
33.0
3.2
45
0.1
30.0
3.4
45
0.1
27.0
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.25
0.2
3.8
45
0.1
25.0
0.9
4.2
50
0.1
23.0
1.0
4.5
50
0.1
21.0
1.0
4.6
50
0.1
21.0
1.0
5.0
55
0.1
19.0
1.25
5.2
55
0.1
18.0
1.25
5.6
60
0.1
17.0
1.25
MAX.
MAX.
(V)
MAX.
WORKING DIFFERENTIAL
VOLTAGE RESISTANCE
V
Z
(V)
(1)
r
dif
(Ω)
at I
Ztest
at I
Ztest
DIODE CAP. REVERSE CURRENT
TEST
C
d
(pF)
CURRENT
at REVERSE
I
Ztest
(mA) at f = 1 MHz;
VOLTAGE
at V
R
= 0 V
I
R
(µA)
V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
NOM.
MAX.
Philips Semiconductors
PMLL5251B
22
600
PMLL5252B
24
600
PMLL5253B
25
600
PMLL5254B
27
600
Voltage regulator diodes
PMLL5255B
28
600
PMLL5256B
30
600
PMLL5257B
33
700
PMLL5258B
36
700
PMLL5259B
39
800
PMLL5260B
43
900
PMLL5261B
47
1000
4
PMLL5262B
51
1100
PMLL5263B
56
1300
PMLL5264B
60
1400
PMLL5265B
62
1400
PMLL5266B
68
1600
PMLL5267B
75
1700
Notes
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
PMLL5225B to PMLL5267B
2. For types PMLL5225B to PMLL5242B the I
Z
current is 7.5 mA; for PMLL5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°C
and 125
°C.
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
PMLL5225B to PMLL5267B
CONDITIONS
VALUE
300
380
UNIT
K/W
K/W
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
1996 Apr 26
5
NXP MCU
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