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BPX 43-5

Description
phototransistors photodiode
CategoryThe sensor   
File Size249KB,11 Pages
ManufacturerAll Sensors
Environmental Compliance  
Download Datasheet Parametric Compare View All

BPX 43-5 Overview

phototransistors photodiode

BPX 43-5 Parametric

Parameter NameAttribute value
ManufactureOsram Opto Semiconduc
Product CategoryPhototransistors
RoHSYes
Maximum Power Dissipati220 mW
Maximum On-State Collector Curre50 mA
Maximum Dark Curre100 nA
Package / CaseTO-18
Collector- Emitter Voltage VCEO Max50 V
Collector-Emitter Breakdown Voltage50 V
Collector-Emitter Saturation Voltage260 mV
Fall Time18 us
Maximum Collector Curre50 mA
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 40 C
ProducPhototransistors
Rise Time18 us
Factory Pack Quantity1000
TypeChi
Wavelength880 nm
2014-01-14
Silicon NPN Phototransistor
NPN-Silizium-Fototransistor
Version 1.1
BP 103
Spectral range of sensitivity:
(typ) 450 ... 1100
nm
Package:
Metal Can (TO-18), hermetically sealed,
Epoxy
Special:
Base connection
• High linearity
Features:
Spektraler Bereich der Fotoempfindlichkeit:
(typ) 450 ... 1100 nm
Gehäuse:
Metall Gehäuse (TO-18), hermetisch
dicht, Harz
Besonderheit:
Basisanschluss
• Hohe Linearität
Besondere Merkmale:
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
Computer-controlled flashes
Anwendungen
Lichtschranken
Industrieelektronik
Messen / Steuern / Regeln
Computer-Blitzlichtgeräte
Ordering Information
Bestellinformation
Type:
Typ:
Photocurrent
Fotostrom
λ
= 950 nm, E
e
= 0.5 mW/cm , V
CE
= 5 V
I
PCE
[µA]
BP 103
BP 103-3/4
Note:
Anm.:
2
Ordering Code
Bestellnummer
> 80
125 ... 400
Q62702P0075
Q62702P3577
Only one bin within one packing unit (variation less than 2:1)
Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1)
2014-01-14
1

BPX 43-5 Related Products

BPX 43-5 BPX 38-3 BPX 43-3/4 BPX 38-2/3 BPX 43-4 BPY 62-4 BPX 38 BPX 38-4 BPX 43-4/5
Description phototransistors photodiode phototransistors photodiode phototransistors photodiode phototransistors photodiode phototransistors photodiode phototransistors photodiode phototransistors photodiode phototransistors photodiode phototransistors photodiode
Manufacture Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc Osram Opto Semiconduc
Product Category Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors
RoHS Yes Yes Yes Yes Yes Yes Yes Yes Yes
Maximum Power Dissipati 220 mW 220 mW 220 mW 220 mW 220 mW 200 mW 220 mW 220 mW 220 mW
Maximum On-State Collector Curre 50 mA 50 mA 50 mA 50 mA 50 mA 100 mA 50 mA 50 mA 50 mA
Maximum Dark Curre 100 nA 100 nA 100 nA 100 nA 100 nA 50 nA 100 nA 100 nA 100 nA
Package / Case TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18
Fall Time 18 us 12 us 13 us, 15 us 9 us, 12 us 15 us 9 us - 15 us 15 us, 18 us
Maximum Collector Curre 50 mA 50 mA 50 mA 50 mA 50 mA 100 mA 50 mA 50 mA 50 mA
Maximum Operating Temperature + 125 C + 125 C + 125 C + 125 C + 125 C + 125 C + 125 C + 125 C + 125 C
Minimum Operating Temperature - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C
Rise Time 18 us 12 us 13 us, 15 us 9 us, 12 us 15 us 9 us - 15 us 15 us, 18 us
Factory Pack Quantity 1000 1000 1000 1000 1000 1000 1000 1000 1000
Type Chi Chi Chi Chi Chi Chi Chi Chi Chi
Collector- Emitter Voltage VCEO Max 50 V - 50 V 50 V 50 V 35 V 50 V 50 V 50 V
Collector-Emitter Breakdown Voltage 50 V - 50 V 50 V 50 V 35 V 50 V 50 V -
Collector-Emitter Saturation Voltage 260 mV - 240 mV 200 mV 240 mV 160 mV 200 mV 200 mV 240 mV
Produc Phototransistors - Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors
Wavelength 880 nm - 880 nm 880 nm 880 nm 830 nm 880 nm 880 nm 950 nm
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