DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2010EA
Low V
F
(MEGA) Schottky barrier
diode
Product specification
Supersedes data of 2002 Dec 10
2004 Feb 06
Philips Semiconductors
Product specification
Low V
F
(MEGA) Schottky barrier diode
FEATURES
•
Forward current: 1 A
•
Reverse voltage: 20 V
•
Ultra high-speed switching
•
Very low forward voltage
•
Very small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
ORDERING INFORMATION
TYPE
NUMBER
PMEG2010EA
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
Marking code:
E1.
The marking bar indicates the cathode.
olumns
PMEG2010EA
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
1
2
MGU328
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
= 8.3 ms half sinewave;
JEDEC method
CONDITIONS
−
−
−
−65
−
−65
MIN.
1
5
+150
125
+125
MAX.
20
V
A
A
°C
°C
°C
UNIT
2004 Feb 06
2
Philips Semiconductors
Product specification
Low V
F
(MEGA) Schottky barrier diode
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2; note 1
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
I
R
continuous reverse current
see Fig.3; note 1
V
R
= 5 V
V
R
= 8 V
V
R
= 15 V
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.
CONDITIONS
diode capacitance
5
7
10
240
300
480
PMEG2010EA
TYP.
MAX.
270
350
550
10
20
50
25
UNIT
mV
mV
mV
µA
µA
µA
pF
V
R
= 5 V; f = 1 MHz; see Fig.4 19
VALUE
220
180
UNIT
K/W
K/W
2004 Feb 06
3
Philips Semiconductors
Product specification
Low V
F
(MEGA) Schottky barrier diode
GRAPHICAL DATA
PMEG2010EA
10
3
handbook, halfpage
IF
(mA)
10
2
MHC311
10
5
handbook, halfpage
IR
(µA)
(1)
MHC312
10
4
10
3
(1)
(2)
(3)
(2)
10
10
2
(3)
1
10
10
−1
0
0.2
0.4
VF (V)
0.6
1
0
5
10
15
20
VR (V)
25
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
80
MHC313
Cd
(pF)
60
40
20
0
0
5
10
15
VR (V)
20
T
amb
= 25
°C;
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 06
4
Philips Semiconductors
Product specification
Low V
F
(MEGA) Schottky barrier diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
PMEG2010EA
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
03-12-17
2004 Feb 06
5
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