DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 17
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 250 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.3 to 75 V
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
handbook, halfpage
2
PMBZ5226B to PMBZ5257B
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
1
3
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The series consists of 32 types with
nominal working voltages from
3.3 to 75 V.
MARKING
TYPE
NUMBER
PMBZ5226B
PMBZ5227B
PMBZ5228B
PMBZ5229B
PMBZ5230B
PMBZ5231B
PMBZ5232B
PMBZ5233B
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING
CODE
(1)
∗8A
∗8B
∗8C
∗8D
∗8E
∗8F
∗8G
∗8H
TYPE
NUMBER
PMBZ5234B
PMBZ5235B
PMBZ5236B
PMBZ5237B
PMBZ5238B
PMBZ5239B
PMBZ5240B
PMBZ5241B
MARKING
CODE
(1)
∗8J
∗8K
∗8L
∗8M
∗8N
∗8P
∗8Q
∗8R
TYPE
NUMBER
PMBZ5242B
PMBZ5243B
PMBZ5244B
PMBZ5245B
PMBZ5246B
PMBZ5247B
PMBZ5248B
PMBZ5249B
MARKING
CODE
(1)
∗8S
∗8T
∗8U
∗8V
∗8W
∗8X
∗8Y
∗8Z
TYPE
NUMBER
PMBZ5250B
PMBZ5251B
PMBZ5252B
PMBZ5253B
PMBZ5254B
PMBZ5255B
PMBZ5256B
PMBZ5257B
MARKING
CODE
81A
81B
81C
81D
81E
81F
81G
81H
3
Top view
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 17
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
2. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
PARAMETER
continuous forward current
PMBZ5226B to PMBZ5257B
CONDITIONS
−
MIN.
see Table
“Per type”
−
−
−
−65
−
MAX.
200
UNIT
mA
non-repetitive peak reverse current t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
T
amb
= 25
°C;
note 2
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
300
250
40
+150
150
mW
mW
W
°C
°C
CONDITIONS
I
F
= 200 mA; see Fig.3
MAX.
1.1
UNIT
V
1999 May 17
3
Per type
T
j
= 25
°C
unless otherwise specified.
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
MAX.
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
80
75
75
75
70
6.6
6.2
5.6
70
60
60
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
4.0
3.5
3.0
2.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.5
3.0
3.0
2.5
2.5
2.5
2.0
2.0
1.5
1.5
1.5
1.5
1.5
1.25
1.0
6.0
1.0
6.0
1.0
6.0
1.0
6.0
1.0
6.0
V
R
(V)
MAX.
1999 May 17
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
MAX.
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
80
85
85
90
150
150
150
150
200
200
300
300
300
450
450
450
450
450
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
TYP.
−0.064
−0.065
−0.063
−0.058
−0.047
−0.013
+0.023
+0.023
+0.039
+0.040
+0.047
+0.052
+0.053
+0.055
+0.055
+0.058
+0.062
+0.065
+0.067
+0.073
+0.073
+0.073
+0.078
+0.078
+0.080
+0.080
TYPE No.
TEST
WORKING DIFFERENTIAL TEMP. COEFF.
S
Z
(%/K)
CURRENT
VOLTAGE RESISTANCE
(2)
(1)
r
dif
(Ω)
at I
Z
I
Ztest
(mA)
V
Z
(V)
at I
Ztest
at I
Z
= 0.25 mA
Philips Semiconductors
NOM.
MAX.
PMBZ5226B
3.3
1600
PMBZ5227B
3.6
1700
PMBZ5228B
3.9
1900
Voltage regulator diodes
PMBZ5229B
4.3
2000
PMBZ5230B
4.7
2000
PMBZ5231B
5.1
2000
PMBZ5232B
5.6
1600
PMBZ5233B
6.0
1600
PMBZ5234B
6.2
1000
PMBZ5235B
6.8
750
4
PMBZ5236B
7.5
500
PMBZ5237B
8.2
500
PMBZ5238B
8.7
600
PMBZ5239B
9.1
600
PMBZ5240B
10
600
PMBZ5241B
11
600
PMBZ5242B
12
600
PMBZ5243B
13
600
PMBZ5244B
14
600
PMBZ5245B
15
600
PMBZ5246B
16
600
PMBZ5247B
17
600
PMBZ5248B
18
600
PMBZ5249B
19
600
PMBZ5250B
20
600
PMBZ5226B to PMBZ5257B
Product specification
PMBZ5251B
22
600
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
25
0.9
23
1.0
21
1.0
21
1.0
19
1.25
18
1.25
V
R
(V)
MAX.
1999 May 17
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
5.2
5.0
4.6
4.5
4.2
3.8
45
50
50
50
55
55
TYP.
+0.081
+0.082
+0.085
+0.085
+0.085
+0.085
TYPE No.
TEST
WORKING DIFFERENTIAL TEMP. COEFF.
S
Z
(%/K)
CURRENT
VOLTAGE RESISTANCE
(2)
(1)
at I
Z
r
dif
(Ω)
I
Ztest
(mA)
V
Z
(V)
at I
Z
= 0.25 mA
at I
Ztest
NOM.
MAX.
Philips Semiconductors
PMBZ5252B
24
600
PMBZ5253B
25
600
PMBZ5254B
27
600
PMBZ5255B
28
600
PMBZ5256B
30
600
Voltage regulator diodes
PMBZ5257B
33
700
Notes
1. V
Z
is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
2. For types PMBZ5226B to PMBZ5242B the I
Z
current is 7.5 mA; for PMBZ5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°C
and 125
°C.
5
PMBZ5226B to PMBZ5257B
Product specification
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