DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH10
NPN 1 GHz general purpose
switching transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
FEATURES
•
Low cost
•
High power gain.
1
DESCRIPTION
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
2
3
PINNING
PIN
base
emitter
collector
1
Top view
PMBTH10
DESCRIPTION
Code: V30
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
V
EBO
P
tot
h
FE
C
re
C
rb
f
T
r
b
C
c
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
total power dissipation
DC current gain
collector-emitter feedback
capacitance
collector-base feedback
capacitance
transition frequency
collector-base time constant
open base
open collector
T
s
= 45
°C
(note 1)
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= 0; f = 1 MHz
V
CB
= 10 V; I
E
= 0; f = 1 MHz
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
CONDITIONS
open emitter
MIN.
−
−
−
−
60
−
0.35
650
−
MAX.
30
25
3
400
−
0.7
0.65
−
9
pF
pF
MHz
ps
V
V
V
mW
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
T
s
= 45
°C
(note 1)
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
30
25
3
40
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE sat
V
BE on
I
CBO
I
EBO
h
FE
C
re
C
rb
f
T
r
b
C
c
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter feedback
capacitance
collector-base feedback capacitance
transition frequency
collector-base time constant
CONDITIONS
open emitter; I
C
= 100
µA;
I
E
= 0
open base; I
C
= 1 mA; I
B
= 0
open collector; I
E
= 10
µA;
I
C
= 0
I
C
= 4 mA; I
B
= 0.4 mA
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 25 V; I
E
= 0
V
CB
= 25 V; I
C
= 0
V
CE
= 10 V; I
C
= 4 mA
V
CB
= 10 V; I
E
= i
e
= 0;
f = 1 MHz
V
CB
= 10 V; I
C
= i
c
= 0;
f = 1 MHz
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
V
CB
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
°C
PARAMETER
from junction to soldering point (note 1)
PMBTH10
THERMAL RESISTANCE
260 K/W
MIN. MAX.
30
25
3
−
−
−
−
60
−
0.35
650
−
−
−
−
0.5
0.95
100
100
−
0.7
0.65
−
9
UNIT
V
V
V
V
V
nA
nA
pF
pF
MHz
ps
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
100
handbook, halfpage
Y11
(mS)
80
g11
60
−b
11
40
MRA168
handbook, halfpage
−10
b11
MRA170
(mS)
−20
−30
1000 MHz
−40
700
400
20
−50
200 100
0
10
2
f (MHz)
10
3
−60
0
20
40
60
80
100
g11 (mS)
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.2
Common base input admittance (Y
11
) as a
function of frequency.
Fig.3 Common base input admittance (Y
11
).
handbook, halfpage
70
MRA169
Y21
handbook, halfpage
60
MRA171
b21
200
400
600
700
(mS)
50
b21
(mS)
50
100
30
−g
21
40
10
30
1000 MHz
−10
20
−30
10
2
f (MHz)
10
3
10
−70
−50
−30
−10
10
30
g21 (mS)
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.4
Common base forward transfer admittance
(Y
21
) as a function of frequency.
Fig.5
Common base forward transfer admittance
(Y
21
).
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
handbook, halfpage
5
MRA164
Y12
(mS)
handbook, halfpage
0
MRA166
b12
(mS)
100
200
400
4
−1
3
−2
700
2
−b
12
−3
1000 MHz
1
g12
f (MHz)
10
3
−4
0
10
2
−5
−2
−1.2
−0.4
0.4
1.2
2
g12 (mS)
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.6
Common base reverse transfer admittance
(Y
12
) as a function of frequency.
Fig.7
Common base reverse transfer admittance
(Y
12
).
handbook, halfpage
10
MRA165
Y22
(mS)
handbook, halfpage
10
MRA167
b22
(mS)
1000 MHz
8
8
700 MHz
6
b22
4
6
4
400 MHz
200 MHz
2
g22
0
10
2
0
0
2
4
6
8
10
g22 (mS)
2
100 MHz
f (MHz)
10
3
V
CB
= 10 V; I
C
= 4 mA.
V
CB
= 10 V; I
C
= 4 mA.
Fig.8
Common base reverse admittance (Y
22
) as
a function of frequency.
Fig.9 Common base reverse admittance (Y
22
).
September 1995
5
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