PMBT6429 datasheet, PDF - EEWORLD Datasheet

PMBT6429: DescriptionRF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size45KB，8 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/; Environmental Compliance

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PMBT6429 Overview

RF SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.2 A
Configuration	Single
Minimum DC current gain (hFE)	500
JESD-609 code	e3
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Terminal surface	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

PMBT6428; PMBT6429

NPN general purpose transistors

Product speciﬁcation

Supersedes data of 1997 Apr 02

1999 Apr 27

	PMBT6429	PMBT6428
Description	RF SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknow	unknow
Maximum collector current (IC)	0.2 A	0.2 A
Configuration	Single	Single
Minimum DC current gain (hFE)	500	250
JESD-609 code	e3	e3
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz	100 MHz

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