DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBT6428; PMBT6429
NPN general purpose transistors
Product specification
Supersedes data of 1997 Apr 02
1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 50 V).
APPLICATIONS
•
General purpose switching and amplification
•
Telephony and professional communication equipment.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
handbook, halfpage
PMBT6428; PMBT6429
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
MARKING
TYPE NUMBER
PMBT6428
PMBT6429
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1 Simplified outline SOT23 and symbol.
MARKING CODE
(1)
∗1K
∗1L
Top view
1
2
MAM255
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
PMBT6428
PMBT6429
V
CEO
collector-emitter voltage
PMBT6428
PMBT6429
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
50
45
6
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
60
55
V
V
MIN.
MAX.
UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
PMBT6428
PMBT6429
DC current gain
PMBT6428
PMBT6429
DC current gain
PMBT6428
PMBT6429
V
CEsat
V
BE
C
c
C
e
f
T
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 1 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
C
= 1 mA; V
CE
= 5 V
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 5 V
I
C
= 0.1 mA; V
CE
= 5 V
PARAMETER
thermal resistance from junction to ambient
PMBT6428; PMBT6429
CONDITIONS
note 1
VALUE
500
UNIT
K/W
MIN.
−
−
250
500
250
500
250
500
−
−
560
−
−
100
MAX.
10
10
650
1250
−
−
−
−
200
600
660
3
12
700
UNIT
nA
nA
mV
mV
mV
pF
pF
MHz
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 5 V; f = 100 MHz
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBT6428; PMBT6429
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 27
4
Philips Semiconductors
Product specification
NPN general purpose transistors
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
PMBT6428; PMBT6429
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 27
5
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