DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMBT3904D
NPN switching double transistor
Product specification
1999 Dec 15
Philips Semiconductors
Product specification
NPN switching double transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V)
•
Reduces number of components and board space.
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
Two independently operating NPN switching transistors in
a SC-74, six lead, SMD plastic package.
MARKING
TYPE NUMBER
PMBT3904D
D1
MARKING CODE
handbook, halfpage
6
PMBT3904D
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
5
4
6
5
4
TR2
TR1
1
Top view
2
3
MAM432
1
2
3
Fig.1 Simplified outline (SC-74) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
total power dissipation
T
amb
≤
25
°C;
note 1
−
600
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
60
40
6
100
200
300
+150
150
+150
V
V
V
mA
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 Dec 15
2
Philips Semiconductors
Product specification
NPN switching double transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBT3904D
VALUE
208
UNIT
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; note 1; Fig.3
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
BE
= 500 mV; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
60
80
100
60
30
−
−
650
−
−
−
300
−
−
−
300
−
−
200
200
850
950
4
8
−
5
mV
mV
mV
mV
pF
pF
MHz
dB
−
−
50
50
nA
nA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA; V
CC
= 3 V;
−
V
BB
=
−1.9
V
−
−
−
−
−
65
35
35
240
200
50
ns
ns
ns
ns
ns
ns
1999 Dec 15
3
Philips Semiconductors
Product specification
NPN switching double transistor
PMBT3904D
handbook, full pagewidth
VBB
VCC
RB
(probe)
oscilloscope
450
Ω
Vi
R1
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 600
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
=
−1.9
V; V
CC
= 3 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Dec 15
4
Philips Semiconductors
Product specification
NPN switching double transistor
PMBT3904D
handbook, halfpage
500
MCD785
handbook, halfpage
0.5
MCD788
hFE
400
(1)
VCEsat
(V)
0.4
300
(2)
0.3
200
(3)
0.2
(1)
100
0.1
(3)
(2)
0
10
−1
1
10
10
2
IC (mA)
10
3
0
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 1 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
1
MCD786
VBE
(V)
handbook, halfpage
(1)
100
IC
MCD787
0.8
(2)
(mA)
80
(1)
(2)
(3)
(4)
0.6
(3)
60
(5)
(6)
0.4
40
(7)
(8)
(9)
0.2
20
(10)
0
10
−1
1
10
10
2
IC (mA)
10
3
0
0
2
4
6
8
10
VCE (V)
V
CE
= 1 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
(1)
(2)
(3)
(4)
I
B
= 500
µA.
I
B
= 450
µA.
I
B
= 400
µA.
I
B
= 350
µA.
(5)
(6)
(7)
(8)
I
B
= 300
µA.
I
B
= 250
µA.
I
B
= 200
µA.
I
B
= 150
µA.
(9) I
B
= 100
µA.
(10) I
B
= 50
µA.
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
1999 Dec 15
5
Domestic Chip Exchange
京公网安备 11010802033920号
EEWORLD
