DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBT2907; PMBT2907A
PNP switching transistors
Product specification
Supersedes data of 1997 Sep 04
1999 Apr 27
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: PMBT2222 and PMBT2222A.
MARKING
TYPE NUMBER
PMBT2907
PMBT2907A
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2B
∗2F
Top view
handbook, halfpage
PMBT2907; PMBT2907A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
PMBT2907
PMBT2907A
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−40
−60
−5
−600
−800
−200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
MIN.
MAX.
−60
UNIT
V
1999 Apr 27
2
Philips Semiconductors
Product specification
PNP switching transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
PMBT2907
PMBT2907A
collector cut-off current
PMBT2907
PMBT2907A
I
EBO
h
FE
emitter cut-off current
DC current gain
PMBT2907
PMBT2907A
DC current gain
PMBT2907
PMBT2907A
DC current gain
PMBT2907
PMBT2907A
DC current gain
DC current gain
PMBT2907
PMBT2907A
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−150
mA; I
B
=
−15
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−150
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−10
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
= 0; V
EB
=
−5
V
I
C
=
−0.1
mA; V
CE
=
−10
V
CONDITIONS
I
E
= 0; V
CB
=
−50
V
PARAMETER
thermal resistance from junction to ambient
PMBT2907; PMBT2907A
CONDITIONS
note 1
VALUE
500
UNIT
K/W
MIN.
−
−
MAX.
−20
−10
−20
−10
−50
−
−
−
−
−
−
300
−
−
−400
−1.6
−1.3
−2.6
8
30
−
UNIT
nA
nA
µA
µA
nA
I
E
= 0; V
CB
=
−50
V; T
j
= 125
°C
−
−
−
35
75
50
100
75
100
100
30
50
−
−
−
−
−
−
200
mV
V
V
V
pF
pF
MHz
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−2
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−20
V; f = 100 MHz
1999 Apr 27
3
Philips Semiconductors
Product specification
PNP switching transistors
PMBT2907; PMBT2907A
SYMBOL
PARAMETER
CONDITIONS
I
Con
=
−150
mA; I
Bon
=
−15
mA;
I
Boff
= 15 mA
−
−
−
−
−
−
MIN.
MAX.
UNIT
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−9.5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
= 3.5 V; V
CC
=
−29.5
V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 27
4
Philips Semiconductors
Product specification
PNP switching transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBT2907; PMBT2907A
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 27
5
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