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PMBFJ110

Description
N-channel junction FETs
CategoryDiscrete semiconductor    The transistor   
File Size30KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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PMBFJ110 Overview

N-channel junction FETs

PMBFJ110 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
FET technologyJUNCTION
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995

PMBFJ110 Related Products

PMBFJ110 PMBFJ109 PMBFJ108
Description N-channel junction FETs N-channel junction FETs N-channel junction FETs
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
FET technology JUNCTION JUNCTION JUNCTION
JESD-609 code e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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