DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
N-channel junction FETs
FEATURES
•
High-speed switching
•
Interchangeability of drain and
source connections
•
Low R
DSon
at zero gate voltage
(
<
8
Ω
for PMBFJ108).
handbook, halfpage
PMBFJ108;
PMBFJ109; PMBFJ110
3
d
s
DESCRIPTION
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
PINNING - SOT23
PIN
1
2
3
Note
1. Drain and source are
interchangeable.
DESCRIPTION
drain
source
gate
g
1
Top view
2
MAM385
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain-drain voltage
forward gate current
(DC)
total power dissipation
storage temperature
operating junction
temperature
T
amb
= 25°C;
note 1
−
−65
−
CONDITIONS
MIN.
−
−
−
MAX.
±25
−25
−25
50
250
150
150
UNIT
V
V
V
mA
mW
°C
°C
April 1995
2
Philips Semiconductors
Product specification
N-channel junction FETs
THERMAL RESISTANCE
SYMBOL
R
th j-a
Notes
1. Mounted on an FR-4 printboard.
STATIC CHARACTERISTICS
T
j
= 25
°C.
SYMBOL
−I
GSS
I
DSX
I
DSS
PARAMETER
reverse gate current
drain-source cut-off current
drain current
PMBFJ108
PMBFJ109
PMBFJ110
−V
(BR)GSS
−V
GS(off)
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ108
PMBFJ109
PMBFJ110
R
DS(on)
drain-source on-resistance
PMBFJ108
PMBFJ109
PMBFJ110
V
GS
= 0 V
V
DS
= 0.1 V
−I
G
= 1
µA
V
DS
= 0
I
D
= 1
µA
V
DS
= 5 V
PARAMETER
from junction to ambient (note 1)
VALUE
500
K/W
UNIT
PMBFJ108;
PMBFJ109; PMBFJ110
CONDITIONS
−V
GS
= 15 V
V
DS
= 0
V
GS
=
−10
V
V
DS
= 5 V
V
GS
= 0
V
DS
= 15 V
MIN.
−
−
MAX.
3
3
UNIT
nA
nA
80
40
10
−
−
−
−
25
mA
V
3
2
0.5
−
−
−
10
6
4
8
12
18
V
Ω
April 1995
3
Philips Semiconductors
Product specification
N-channel junction FETs
DYNAMIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
C
is
PARAMETER
input capacitance
CONDITIONS
V
DS
= 0
−V
GS
= 10 V
f = 1 MHz
V
DS
= 0
−V
GS
= 0
f = 1 MHz
T
amb
= 25
°C
V
DS
= 0
−V
GS
= 10 V
f = 1 MHz
PMBFJ108;
PMBFJ109; PMBFJ110
TYP.
15
MAX.
30
UNIT
pF
C
is
input capacitance
50
85
pF
C
rs
feedback capacitance
8
15
pF
Switching times
(see Fig.2)
t
d
t
on
t
s
t
off
Notes
1. Test conditions for switching times are as follows:
V
DD
= 1.5 V, V
GS
= 0 to
−V
GS(off)
(all types);
−V
GS(off)
= 12 V, R
L
= 100
Ω
(PMBFJ108);
−V
GS(off)
= 7 V, R
L
= 100
Ω
(PMBFJ109);
−V
GS(off)
= 5 V, R
L
= 100
Ω
(PMBFJ110).
delay time
turn-on time
storage time
turn-off time
note 1
note 1
note 1
note 1
2
4
4
6
−
−
−
−
ns
ns
ns
ns
k, halfpage
VDD
10 nF
50
Ω
10
µF
0.1
µF
VGS = 0 V
Vi
10%
RL
SAMPLING
SCOPE
50
Ω
−V
GS off
90%
toff
ts
90%
tf
td
ton
tr
DUT
50
Ω
Vo
MBK295
10%
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4
Philips Semiconductors
Product specification
N-channel junction FETs
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBFJ108;
PMBFJ109; PMBFJ110
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
April 1995
5
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