DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors
Product specification
N-channel FETs
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic
microminiature envelope intended for
application in thick and thin-film
circuits. The transistors are intended
for low-power chopper or switching
applications in industry.
PINNING
1
2
3
= drain
= source
= gate
PMBF4391;
PMBF4392; PMBF4393
handbook, halfpage
3
d
s
g
1
Top view
2
MAM385
Note
1. Drain and source are
interchangeable.
Marking code
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
Fig.1 Simplified outline and symbol, SOT23.
QUICK REFERENCE DATA
PMBF4391
Drain-source voltage
Drain current
V
DS
= 20 V; V
GS
= 0
Gate-source cut-off voltage
V
DS
= 20 V; I
D
= 1 nA
Drain-source resistance (on) at f = 1 kHz
I
D
= 0; V
GS
= 0
Feedback capacitance at f = 1 MHz
−V
GS
= 12 V; V
DS
= 0
Turn-off time
V
DD
= 10 V; V
GS
= 0
I
D
= 12 mA;
−V
GSM
= 12 V
I
D
= 6 mA;
−V
GSM
= 7 V
I
D
= 3 mA;
−V
GSM
= 5 V
t
off
t
off
t
off
<
<
<
20
−
−
−
35
−
−
−
50
ns
ns
ns
C
rs
<
3.5
3.5
3.5
pF
R
ds on
<
30
60
100
Ω
−V
(P)GS
>
<
4
10
2
5
0.5
3
V
V
I
DSS
>
50
25
5
mA
±
V
DS
max.
40
PMBF4392
40
PMBF4393
40
V
April 1995
2
Philips Semiconductors
Product specification
N-channel FETs
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Gate current (DC)
Total power dissipation up to T
amb
= 40
°C
(1)
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient
(1)
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Gate-source voltage
I
G
= 1 mA; V
DS
= 0
Gate-source cut-off current
V
DS
= 0 V;
−V
GS
= 20 V
V
DS
= 0 V;
−V
GS
= 20 V; T
amb
= 150
°C
Drain current
V
DS
= 20 V; V
GS
= 0
Gate-source breakdown voltage
−I
G
= 1
µA;
V
DS
= 0
Gate-source cut-off voltage
I
D
= 1 nA; V
DS
= 20 V
Drain-source voltage (on)
I
D
= 12 mA; V
GS
= 0
I
D
= 6 mA; V
GS
= 0
I
D
= 3 mA; V
GS
= 0
Drain-source resistance (on)
I
D
= 0; V
GS
= 0; f = 1 kHz; T
amb
= 25
°C
Drain cut-off current
−V
GS
= 12 V
−V
GS
= 7 V
−V
GS
= 5 V
−V
GS
= 12 V
−V
GS
= 7 V
−V
GS
= 5 V
April 1995
V
DS
= 20 V; T
amb
= 150
°C
V
DS
= 20 V
I
DSX
I
DSX
I
DSX
I
DSX
I
DSX
I
DSX
3
<
<
<
<
<
<
r
ds on
<
V
DSon
V
DSon
V
DSon
<
<
<
−V
(BR)GSS
−V
(P)GS
>
>
<
R
th j-a
±
V
DS
V
DGO
−V
GSO
I
G
P
tot
T
stg
T
j
PMBF4391; PMBF4392;
PMBF4393
max.
max.
max.
max.
max.
max.
40 V
40 V
40 V
50 mA
250 mW
150
°C
−65
to
+
150
°C
=
430 K/W
V
GSon
−I
GSS
−I
GSS
PMBF4391
I
DSS
>
<
50
150
<
<
<
PMBF4392
25
75
1 V
0.1 nA
0.2
µA
PMBF4393
5 mA
30 mA
40
4
10
40
2
5
40 V
0.5 V
3 V
0.4
−
30
0.1
−
−
0.2
−
−
−
0.4
−
−
−
0.1
−
−
0.2
−
−
V
−
V
0.4 V
100
Ω
−
nA
−
nA
0.1 nA
− µA
− µA
0.2
µA
Philips Semiconductors
Product specification
N-channel FETs
PMBF4391; PMBF4392;
PMBF4393
y-parameters
(common source)
V
DS
= 20 V; V
GS
= 0; f = 1 MHz; T
amb
= 25
°C
Input capacitance
Feedback capacitance
−V
GS
= 12 V
−V
GS
= 7 V
−V
GS
= 5 V
Switching times
V
DD
= 10 V
; V
DS
= 0
I
D
−V
GS off
R
L
Rise time
Turn on time
Fall time
Turn off time
Note
1. Mounted on a ceramic substrate of 8 mm
×
10 mm
×
0,7 mm.
t
r
t
on
t
f
t
off
=
=
=
<
<
<
<
12
12
750
5
15
15
20
6
7
1550
5
15
20
35
3 mA
5 V
3150
Ω
5 ns
15 ns
30 ns
50 ns
Conditions I
D
and
−V
GSoff
; V
DS
= 0
; V
DS
= 0
; V
DS
= 0
C
rs
C
rs
C
rs
<
<
<
3.5
−
−
−
3.5
−
−
pF
−
pF
3.5 pF
C
is
PMBF4391
<
14
PMBF4392
14
PMBF4393
14 pF
handbook, full pagewidth
VGS = 0 V
Vi
−V
GS off
10%
90%
toff
tf
90%
ton
tr
Vo
10%
MBK288
Fig.2 Switching times waveforms.
April 1995
4
Philips Semiconductors
Product specification
N-channel FETs
Pulse generator:
t
r
t
f
t
p
δ
handbook, halfpage
PMBF4391; PMBF4392;
PMBF4393
<
<
=
=
=
0.5 ns
0.5 ns
100
µs
0.01
50
Ω
VDD
10 nF
50
Ω
10
µF
RL
1
µF
Oscilloscope:
R
i
DUT
50
Ω
SAMPLING
SCOPE
50
Ω
MBK289
Fig.3 Test circuit.
handbook, halfpage
300
MDA245
Ptot
(mW)
200
100
0
0
40
80
120
200
160
Tamb (°C)
Fig.4 Power derating curve.
April 1995
5
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