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PMBD2835

Description
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size40KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

PMBD2835 Overview

0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE

PMBD2835 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee0
Maximum operating temperature150 °C
Maximum output current0.1 A
Maximum repetitive peak reverse voltage35 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD2835; PMBD2836
High-speed double diodes
Product specification
Supersedes data of April 1996
1996 Sep 18

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PMBD2835 PMBD2836
Description 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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