FHT2412S datasheet, PDF - EEWORLD Datasheet

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FHT2412S: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size105KB，2 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHT2412S Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FHT2412S Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	270
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Base Number Matches	1

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广东肇庆风华新谷微电子有限公司

广东省肇庆市风华路

18

号风华电子工业城三号楼一楼

TEL:0758-2865088 2865091

FAX:0758-2849749

General Purpose Transistors

三极管

NPN Silicon (FHT2412)

FEATURES

特点

· Excellent h

FE

Linearity h

FE

线性特性极½

h

FE

(0.1mA)/h

FE

(2mA)=0.95(Typ.)

·Low Noise

½噪声:NF=1dB(Typ.),10dB(Max.).

· Complementary to FHT1037

与

FHT1037

互补

MAXIMUM RATINGS

(T

a

=25℃)

最大额定值

CHARACTERISTIC

特性参数

Collector-Base Voltage

集电极-基极电压

Collector-Emitter Voltage

集电极-发射极电压

Emitter-Base Voltage

发射极-基极电压

Collector Current—Continuous

集电极电流-连续

Collector Power Dissipation

集电极耗散功率

Junction Temperature

结温

Storage Temperature Range

储存温度

Symbol

符号

V

CBO

V

CEO

V

EBO

Ic

P

C

T

j

T

stg

Rating

额定值

60

50

7.0

150

200

150

-55½150

Unit

单½

Vdc

mAdc

mW

℃

DEVICE MARKING

打标

h

FE

(1)FHT2412Q=BQ(120½270), FHT2412R=BR(180½390), FHT2412S=BS(270½560)

ELECTRICAL CHARACTERISTICS

电特性

(T

A

=25

℃

unless otherwise noted

如无特殊说明，温度为

25

℃

)

Symbol

符号

I

CBO

Collector Cutoff Current

集电极截止电流

Characteristic

特性参数

Emitter Cutoff Current

发射极截止电流

Collector-Base Breakdown Voltage

集电极-基极击穿电压

Collector-Emitter Breakdown Voltage

集电极-发射极击穿电压

Emitter-Base Breakdown Voltage

发射极-基极击穿电压

DC Current Gain

直流电流增益

Collector-Emitter Saturation Voltage

集电极-发射极饱和压降

Transition Frequency

特征频率

Collector Output Capacitance

输出电容

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

h

FE

V

CE(sat)

f

T

C

ob

Test Condition

测试条件

V

CB

=60V,I

E

=0

V

EB

=7V,I

C

=0

I

C

=50μA

I

C

=1.0mA

I

E

=50μA

V

CE

=6V,I

C

=1mA

I

C

=50mA,I

B

=5mA

V

CE

=12V,I

E

=-2mA,

f=100MHz

V

CB

=12V,I

E

=0,f=1MHz

Min TYP Max Unit

最小值典型最大值单½

—

0.1

μA

—

60

50

7

120

—

180

2.0

0.1

—

560

0.4

—

3.5

μA

V

—

V

MHz

pF

Page 0 of

6

*2005

年第

2

版*

FHT2412S Related Products

	FHT2412S	FHT2412R
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Maker	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	270	180
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz
Base Number Matches	1	1

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