PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→
IN2
→
IN3
→
INPUT
1
2
3
18
→
O1
17
→
O2
16
→
O3
15
→
O4
14
→
O5
13
→
O6
12
→
O7
11
→
O8
10
DESCRIPTION
M63805P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
IN4
→
4
IN5
→
5
OUTPUT
IN6
→
6
FEATURES
q
Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BV
CEO
≥
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85°C)
IN7
→
IN8
→
GND
7
8
9
→
NC
Package type
18P4G(P)
NC
1
20
NC
IN1
→
2
IN2
→
3
19
→
O1
18
→
O2
17
→
O3
16
→
O4
15
→
O5
14
→
O6
13
→
O7
12
→
O8
11
→
NC
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
IN3
→
4
IN4
→
5
INPUT
IN5
→
6
IN6
→
7
IN7
→
8
IN8
→
9
OUTPUT
FUNCTION
The M63805P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
GND
10
NC : No connection
20P2N-A(FP)
Package type
20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
Vz=7V
INPUT
10.5K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
Ω
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
M63805P
M63805FP
M63805KP
Ratings
–0.5 ~ +35
300
–0.5 ~ +35
1.79
1.10
0.68
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
W
°C
°
C
Ta = 25°C, when mounted
on board
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Symbol
V
O
Parameter
Output voltage
Collector current
I
C
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
V
IN
Input voltage
M63805P
M63805FP
M63805KP
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
Test conditions
Limits
min
0
0
0
0
0
0
0
0
typ
—
—
—
—
—
—
—
—
max
35
250
170
250
130
250
100
30
Unit
V
mA
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
V
(BR) CEO
V
CE(sat)
V
IN(on)
h
FE
Parameter
Collector-emitter breakdown voltage
Test conditions
Limits
min
35
—
—
13
50
typ
—
—
—
19
—
max
—
0.2
0.8
23
—
Unit
V
V
V
—
I
CEO
= 10µA
I
IN
= 1mA, I
C
= 10mA
Collector-emitter saturation voltage
I
IN
= 2mA, I
C
= 150mA
“On” input voltage
I
IN
= 1mA, I
C
= 10mA
DC amplification factor
V
CE
= 10V, I
C
= 10mA
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
Limits
min
—
—
typ
140
240
max
—
—
Unit
ns
ns
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
TIMING DIAGRAM
Vo
50%
50%
NOTE 1 TEST CIRCUIT
INPUT
Measured device
PG
R
L
OUTPUT
INPUT
OUTPUT
50Ω
C
L
50%
50%
ton
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
IH
= 18V
(2)Input-output conditions : R
L
= 220Ω, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
toff
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
M63805P
Input Characteristics
4
Power dissipation Pd (W)
Input current I
I
(mA)
1.5
M63805FP
3
Ta = –40°C
Ta = 25°C
1.0
M63805KP
0.931
2
0.5
0.572
0.354
1
Ta = 85°C
0
0
25
50
75 85
100
0
0
5
10
15
20
25
30
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics
(M63805P)
400
400
Input voltage V
I
(V)
Duty Cycle-Collector Characteristics
(M63805P)
Collector current Ic (mA)
300
~
Collector current Ic (mA)
300
~
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
200
200
100
0
0
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
100
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle-Collector Characteristics
(M63805FP)
400
400
Duty Cycle-Collector Characteristics
(M63805FP)
Collector current Ic (mA)
300
200
~
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
Collector current Ic (mA)
300
200
100
100
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63805KP)
400
400
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63805KP)
Collector current Ic (mA)
300
~
Collector current Ic (mA)
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
200
100
100
0
0
20
40
60
80
100
0
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
20
40
60
80
100
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
250
Ta = 25°C
I
B
= 2mA
I
B
= 3mA
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
100
Ta = 25°C V
I
= 32V
Collector current Ic (mA)
Collector current Ic (mA)
200
I
B
= 1.5mA
I
B
= 1mA
80
V
I
= 28V
V
I
= 24V
V
I
= 20V
V
I
= 16V
150
60
100
I
B
= 0.5mA
40
20
V
I
= 12V
50
0
0
0.2
0.4
0.6
0.8
0
0
0.05
0.10
0.15
0.20
Output saturation voltage V
CE(sat)
(V)
Output saturation voltage V
CE(sat)
(V)
Jan. 2000
PR
ion. ange.
h
icat
ecif ct to c
l sp
e
fina e subj
ot a its ar
is n
m
This etric li
e:
otic param
N
e
Som
IMI
EL
ARY
N
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Output Saturation Voltage
Collector Current Characteristics
100
I
I
= 2mA
DC Amplification Factor
Collector Current Characteristics
10
3
DC amplification factor h
FE
7
5
3
2
V
CE
10V
Ta = 25°C
Collector current Ic (mA)
80
Ta = –40°C
Ta = 25°C
Ta = 85°C
60
10
2
7
5
3
2
40
20
0
0
0.05
0.10
0.15
0.20
10
1
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
Collector current Ic (mA)
Output saturation voltage V
CE(sat)
(V)
Grounded Emitter Transfer Characteristics
50
V
CE
= 4V
Grounded Emitter Transfer Characteristics
250
V
CE
= 4V
Collector current Ic (mA)
Collector current Ic (mA)
40
200
150
Ta = 85°C
Ta = 25°C
30
Ta = 25°C
20
Ta = 85°C
Ta = –40°C
100
50
Ta = –40°C
10
0
0
2
4
6
8
10
12
0
0
4
8
12
16
20
Input voltage V
I
(V)
Input voltage V
I
(V)
Jan. 2000
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