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M63805P

Description
8-unit 300ma transistor array
CategoryDiscrete semiconductor    The transistor   
File Size64KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

M63805P Overview

8-unit 300ma transistor array

M63805P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?incompatible
MakerMitsubishi
package instructionIN-LINE, R-PDIP-T18
Contacts18
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage35 V
ConfigurationSEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDIP-T18
JESD-609 codee0
Number of components8
Number of terminals18
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→
IN2
IN3
INPUT
1
2
3
18
O1
17
O2
16
O3
15
O4
14
O5
13
O6
12
O7
11
O8
10
DESCRIPTION
M63805P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
IN4
4
IN5
5
OUTPUT
IN6
6
FEATURES
q
Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = –40 to +85°C)
IN7
IN8
GND
7
8
9
NC
Package type
18P4G(P)
NC
1
20
NC
IN1
2
IN2
3
19
O1
18
O2
17
O3
16
O4
15
O5
14
O6
13
O7
12
O8
11
NC
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
IN3
4
IN4
5
INPUT
IN5
6
IN6
7
IN7
8
IN8
9
OUTPUT
FUNCTION
The M63805P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
GND
10
NC : No connection
20P2N-A(FP)
Package type
20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
Vz=7V
INPUT
10.5K
10K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:
Jan. 2000

M63805P Related Products

M63805P M63805FP M63805KP
Description 8-unit 300ma transistor array 8-unit 300ma transistor array 8-unit 300ma transistor array
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? incompatible incompatible incompatible
Maker Mitsubishi Mitsubishi Mitsubishi
package instruction IN-LINE, R-PDIP-T18 SMALL OUTLINE, R-PDSO-G20 SMALL OUTLINE, R-PDSO-G20
Contacts 18 20 20
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A
Collector-emitter maximum voltage 35 V 35 V 35 V
Configuration SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 50 50 50
JESD-30 code R-PDIP-T18 R-PDSO-G20 R-PDSO-G20
JESD-609 code e0 e0 e0
Number of components 8 8 8
Number of terminals 18 20 20
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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