MAC4SM, MAC4SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
•
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
•
High Immunity to dv/dt — 50 V/
m
s Minimum at 125
_
C
•
Commutating di/dt — 3.0 A/ms Minimum at 125
_
C
•
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
•
On-State Current Rating of 4 Amperes RMS at 100
_
C
•
High Surge Current Capability — 40 Amperes
•
Blocking Voltage to 800 Volts
•
Rugged, Economical TO220AB Package
•
Operational in Three Quadrants: Q1, Q2, and Q3
•
Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code
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TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
MT2
G
MT1
4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4SM
MAC4SN
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
Peak Gate Power
(Pulse Width
≤
1.0
µs,
TC = 100°C)
Average Gate Power
(t = 8.3 ms, TC = 100°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM,
VRRM
600
800
IT(RMS)
4.0
Amps
Value
Unit
Volts
1
2
3
TO–220AB
CASE 221A
STYLE 4
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
40
6.6
0.5
0.1
– 40 to
+125
– 40 to
+150
Amps
A2sec
Watt
Watt
°C
°C
MAC4SM
MAC4SN
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
Device
Package
TO220AB
TO220AB
Shipping
50 Units/Rail
50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 1999
1
February, 2000 – Rev. 1
Publication Order Number:
MAC4SM/D
MAC4SM, MAC4SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
θJC
R
θJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
—
—
—
—
0.01
2.0
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM =
±
6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Holding Current
(VD = 12 V, Gate Open, Initiating Current =
±200
mA)
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VTM
IGT
2.9
2.9
2.9
IH
IL
—
—
—
VGT
0.5
0.5
0.5
0.7
.65
0.7
1.3
1.3
1.3
6.0
15
6.0
30
30
30
V
2.0
4.0
4.7
6.0
5.0
10
10
10
15
mA
mA
—
1.3
1.6
V
mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/µs, Gate Open,
TJ = 125°C, f = 500 Hz, CL = 5.0
µF,
LL = 20 mH, No Snubber)
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
µsec;
diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(di/dt)c
3.0
4.0
—
A/ms
dv/dt
50
150
—
V/µs
di/dt
—
—
10
A/µs
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MAC4SM, MAC4SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IH
Quadrant 3
VTM
MainTerminal 2 –
IRRM at VRRM
on state
VTM
IH
off state
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(–) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant I
IGT –
(–) MT2
(–) MT2
+ IGT
Quadrant III
(–) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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MAC4SM, MAC4SN
IGT, GATE TRIGGER CURRENT (mA)
100
VGT, GATE TRIGGER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
Q2
0.5
Q1
0.4
0.3
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Q3
10
Q3
Q2
Q1
1
– 40 – 25 – 10
5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
IL , LATCHING CURRENT (mA)
100
IH, HOLDING CURRENT (mA)
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Q2
Q1
10
Q3
10
MT2 Positive
MT2 Negative
1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Latching Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
125
TC , CASE TEMPERATURE (
°
C)
6
Figure 4. Typical Holding Current
versus Junction Temperature
DC
5
4
90°
3
2
1
0
60°
30°
180°
120°
120
115
60°
110
90°
120°
180°
105
30°
DC
0
0.5
1
1.5
2
2.5
3
3.5
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
0
1
2
3
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
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MAC4SM, MAC4SN
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
100
1
Typical @ TJ = 125°C
Maximum @ TJ = 125°C
10
0.1
1
0.01
0.1
1
10
100
t, TIME (ms)
1000
10000
Figure 8. Typical Thermal Response
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.1
Figure 7. Typical On-State Characteristics
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