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2N7298H

Description
9A, 500V, 0.615ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size143KB,4 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

2N7298H Overview

9A, 500V, 0.615ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

2N7298H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1407161182
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.615 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)27 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)980 ns
Maximum opening time (tons)344 ns
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