IS25WP128F-QBLA3 datasheet, PDF

IS25WP128F-QBLA3: DescriptionFlash Memory,; Categorystorage storage; File Size2MB，180 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS25WP128F-QBLA3 Overview

Flash Memory,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	8311617422
package instruction	SOP,
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	EAR99
YTEOL	5.65
Other features	ALSO OPERATES WITH 133MHZ @ 1.65VMIN SUPPLY
Spare memory width	1
Maximum clock frequency (fCLK)	166 MHz
Data retention time - minimum	20
Durability	100000 Write/Erase Cycles
JESD-30 code	S-PDSO-G8
length	5.28 mm
memory density	134217728 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	8
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	16MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.3
Package shape	SQUARE
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
Programming voltage	1.8 V
Filter level	AEC-Q100
Maximum seat height	2.16 mm
Serial bus type	SPI
Maximum standby current	0.000075 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
type	NOR TYPE
width	5.28 mm
write protect	HARDWARE/SOFTWARE

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