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IS61NLP25618EC-200B3L

Description
ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA165, TFBGA-165
Categorystorage    storage   
File Size2MB,40 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
Environmental Compliance
Download Datasheet Parametric View All

IS61NLP25618EC-200B3L Overview

ZBT SRAM, 256KX18, 3.1ns, CMOS, PBGA165, TFBGA-165

IS61NLP25618EC-200B3L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1247971959
Parts packaging codeBGA
package instructionTBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codecompliant
Country Of OriginMainland China, Taiwan
ECCN code3A991.B.2.A
YTEOL5
Maximum access time3.1 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length15 mm
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.08 A
Minimum standby current3.14 V
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
width13 mm
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