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IS64WV25616EFALL-12B3A3

Description
Standard SRAM,
Categorystorage    storage   
File Size579KB,21 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
Download Datasheet Parametric View All

IS64WV25616EFALL-12B3A3 Overview

Standard SRAM,

IS64WV25616EFALL-12B3A3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid7248986867
Reach Compliance Codecompliant
Country Of OriginMainland China, Taiwan
ECCN code3A991.B.2.A
YTEOL5.1
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
length8 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of ports1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256KX16
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.2 mm
Maximum standby current0.02 A
Minimum standby current1.2 V
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm

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