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KSD5041RBU

Description
transistor npn 20v 5A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size66KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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transistor npn 20v 5A TO-92

KSD5041RBU Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
Contacts3
Manufacturer packaging code3 LD, TO92 MOLDED TO-5 STANDARD LD FORM ( JO5Z OPTION)
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)340
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
KSD5041
KSD5041
AF Output Amplifier for Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
20
7
5
0.75
150
-55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=1mA, I
B
=0
I
C
=10µA, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=0.1A
V
CE
=6V, I
C
=50mA
V
CB
=20V, I
E
=0, f=1MHz
150
50
180
150
Min.
20
7
0.1
0.1
600
1
V
MHz
pF
Typ.
Max.
Units
V
V
µA
µA
h
FE
Classification
Classification
h
FE
P
180 ~ 270
Q
230 ~ 380
R
340 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002

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