KSA1370
KSA1370
Crt Display, Video Output
• High Voltage
• Low Reverse Transfer Capacitance : C
re
= 1.7pF
1
TO-92L
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Trnsistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-200
-200
-5
-100
-200
1.0
150
-55 ~ 150
Units
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= -10µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -150V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -10mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
V
CE
= -30V, I
C
= -10mA
V
CB
= -30V, f=1MHz
V
CB
= -30V, f=1MHz
150
2.6
1.7
100
Min.
-200
-200
-5
-0.1
-0.1
320
-0.6
-1.0
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
µA
µA
©2002 Fairchild Semiconductor Corporation
Rev. C, December 2002
KSA1370
Typical Characteristics
-160
1000
Pulse Test
I
C
[mA], COLLECTOR CURRENT
-140
V
CE
= - 5V
Pulse Test
-100
I
B
=-500
µ
A I
B
=-450
µ
A
I
B
=-400
µ
A
I
B
=-350
µ
A
I
B
=-300
µ
A
I
B
=-250
µ
A
I
B
=-200
µ
A
I
B
=-150
µ
A
I
B
=-100
µ
A
I
B
=-50
µ
A
I
B
=0
h
FE
, DC CURRENT GAIN
-120
100
-80
-60
10
-40
-20
-0
-20
-40
-60
-80
-100
-120
-140
-160
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat), V
BE
(sat)[V], SATURATION VOLTAGE
-10
100
I
C
= - 10 I
B
Pulse Test
f=1.0MHz
I
E
=0 (C
ob
)
C
ob
[pF] C
ib
[pF], CAPACITANCE
I
C
=0 (C
ib
)
C
ib
-1
V
BE
(sat)
10
-0.1
V
CE
(sat)
C
ob
-0.01
-0.1
1
-1
-10
-100
-1
-10
-100
-1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
V
EB
[V], EMITTER-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
-1000
V
CE
= -10V
Ta=25 C
Single Pulse
I
C
MAX(Pulse)
s
0
µ
50
o
I
C
[A], COLLECTOR CURRENT
-100
I
C
MAX(DC)
s
1m ms
10
100
-10
10
-1
-10
-100
-1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
V
CEO
MAX
Rev. C, December 2002
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2
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
NXP MCU
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