CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
θ
JC
, the "case temp" location is the center of the ceramic on the package underside.
Electrical Specifications
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s.
PARAMETER
V
OS
DESCRIPTION
Input Offset Voltage
CONDITIONS
MIN
(Note 5)
TYP
10
MAX
(Note 5)
75
110
TCV
OS
I
B
Offset Voltage Drift
Input Bias Current
-1
-5
TCI
B
I
OS
Input Bias Current Temperature
Coefficient
Input Offset Current
-5
-1.5
-3
TCI
OS
V
CM
CMRR
Input Offset Current Temperature
Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
Guaranteed by CMRR test
V
CM
= -13V to +13V
-3
-13
120
120
PSRR
Power Supply Rejection Ratio
V
S
= ±2.25V to ±20V
120
120
A
VOL
V
OH
Open-Loop Gain
Output Voltage High
V
O
= -13V to +13V, R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
3,000
13.5
13.2
R
L
= 2kΩ to ground
13.3
13.0
V
OL
Output Voltage Low
R
L
= 10kΩ to ground
-13.7
-13.5
-13.2
R
L
= 2kΩ to ground
-13.55
-13.3
-13.0
13.55
14,000
13.7
145
145
0.42
1
0.08
0.1
0.08
1
1
5
5
1.5
3
3
13
UNIT
µV
µV
µV/
°
C
nA
nA
pA/°C
nA
nA
pA/°C
V
dB
dB
dB
dB
V/mV
V
V
V
V
V
V
V
V
4
July 2, 2012
FN7962.0
ISL70417SEH
Electrical Specifications
V
S
± 15V, V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply over the operating
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s. (Continued)
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