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K4H280438C-TLA20

Description
DDR DRAM, 32MX4, 0.75ns, CMOS, PBGA136,
Categorystorage    storage   
File Size331KB,54 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4H280438C-TLA20 Overview

DDR DRAM, 32MX4, 0.75ns, CMOS, PBGA136,

K4H280438C-TLA20 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid108998356
package instructionFBGA, BGA136,12X17,32
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL2
Maximum access time0.75 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B136
memory density134217728 bit
Memory IC TypeDDR1 DRAM
memory width4
Humidity sensitivity level3
Number of terminals136
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA136,12X17,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)240
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length2,4,8
Maximum standby current0.004 A
Maximum slew rate0.315 mA
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
128Mb C-die(x4/8) DDR SDRAM
DDR SDRAM Specification
Version 0.9
- 1 -
REV. 0.9 Jan.25. 2002
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