K4H510838D-ZIB3 datasheet, PDF

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K4H510838D-ZIB3: DescriptionDDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60; Categorystorage storage; File Size418KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H510838D-ZIB3 Overview

DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60

K4H510838D-ZIB3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1122314610
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	DDR1 DRAM
memory width	8
Humidity sensitivity level	1
Number of terminals	60
word count	67108864 words
character code	64000000
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.36 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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K4H510838D

K4H511638D

Industrial

DDR SDRAM

512Mb D-die DDR SDRAM Specification

66 TSOP-II & 60FBGA with Pb-Free

(RoHS compliant)

Industrial Temp. -40 to 85°C

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.01 November 2007

K4H510838D

K4H511638D

Table of Contents

Industrial

DDR SDRAM

1.0 Key Features .............................................................................................................................. 4

2.0 Ordering Information ................................................................................................................. 4

3.0 Operating Frequencies .............................................................................................................. 4

4.0 Pin Description .......................................................................................................................... 5

5.0 Ball Description of FBGA .......................................................................................................... 5

6.0 Package Physical Dimension ................................................................................................... 6

7.0 Block Diagram (16Mb x 8 / 8Mb x 16 I/O x4 Banks) ................................................................ 7

8.0 Input/Output Function Description .......................................................................................... 8

9.0 Command Truth Table ............................................................................................................... 9

10.0 General Description ............................................................................................................... 10

11.0 Absolute Maximum Rating .................................................................................................... 10

12.0 DC Operating Conditions ...................................................................................................... 10

13.0 DDR SDRAM IDD Spec Items & Test Conditions ................................................................ 11

14.0 Input/Output Capacitance ..................................................................................................... 11

15.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ..................................................... 12

16.0 DDR SDRAM IDD spec table ................................................................................................. 13

17.0 AC Operating Conditions ...................................................................................................... 14

18.0 AC Overshoot/Undershoot specification for Address and Control Pins .......................... 14

19.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins ............................. 15

20.0 AC Timming Parameters & Specifications .......................................................................... 16

21.0 System Characteristics for DDR SDRAM ............................................................................ 17

22.0 Component Notes .................................................................................................................. 18

22.0 System Notes ......................................................................................................................... 20

24.0 IBIS : I/V Characteristics for Input and Output Buffers ....................................................... 21

Rev. 1.01 November 2007

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