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2N7053_D26Z

Description
transistor darl npn 100v TO-226
Categorysemiconductor    Discrete semiconductor   
File Size307KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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2N7053_D26Z Overview

transistor darl npn 100v TO-226

2N7053_D26Z Parametric

Parameter NameAttribute value
Datasheets
2N7052, 2N7053, NZT7053
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypeNPN - Darling
Current - Collector (Ic) (Max)1.5A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 5V
Power - Max1W
Frequency - Transiti200MHz
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-226
2N7052 / 2N7053 / NZT7053
Discrete POWER & Signal
Technologies
2N7052
2N7053
NZT7053
C
E
C
B
TO-92
E
C
B
E
C
TO-226
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
100
100
12
1.5
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N7052
625
5.0
83.3
200
Max
2N7053
1,000
8.0
125
50
*NZT7053
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
ã
1997 Fairchild Semiconductor Corporation

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