2N7052 / 2N7053 / NZT7053
Discrete POWER & Signal
Technologies
2N7052
2N7053
NZT7053
C
E
C
B
TO-92
E
C
B
E
C
TO-226
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
100
100
12
1.5
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N7052
625
5.0
83.3
200
Max
2N7053
1,000
8.0
125
50
*NZT7053
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
ã
1997 Fairchild Semiconductor Corporation
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 1.0 mA, I
C
= 0
V
CB
= 80 V, I
E
= 0
V
CE
= 80 V, I
E
= 0
V
EB
= 7.0 V, I
C
= 0
100
100
12
0.1
0.2
0.1
V
V
V
µA
µA
µA
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
BE
= 5.0 V
10,000
1,000
20,000
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
F
T
C
cb
Transition Frequency
Collector-Base Capacitance
I
C
= 100 mA, V
CE
= 5.0 V,
V
CB
= 10 V,f = 1.0 MHz
2N7052
2N7053
200
10
8.0
MHz
pF
*
Pulse Test: Pulse Width
£
300
ms,
Duty Cycle
£
1.0%
Typical Characteristics
100
80
60
40
20
0
0.001
125 °C
V
- COLLECTOR EMITTER VOLTAGE (V)
CESAT
h
FE
- TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
2
β
= 1000
1.6
1.2
- 40°C
25 °C
- 40°C
0.8
0.4
0
10
25 °C
125 °C
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
100
I
C
- COLLECTOR CURRENT (mA)
P 06
1000
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
V
BEON
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
2
β
= 1000
- 40°C
25 °C
125 °C
Base Emitter ON Voltage vs
Collector Current
2
1.6
1.2
0.8
0.4
0
10
- 40°C
25 °C
125 °C
1.6
1.2
0.8
0.4
0
10
V
CE
= 5V
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
P 06
1000
Collector-Cutoff Current
vs. Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
V
CB
= 80V
10
Junction Capacitance vs
Reverse Bias Voltage
JUNCTION CAPACITANCE (pF)
100
100
1
10
C ib
0.1
C cb
0.01
25
50
75
100
T
A
- AMBIENT TEMPERATURE ( º C)
P 06
125
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
Typical Collector-Emitter Leakage
Current vs Temperature
I
CES
- LEAKAGE CURRENT (nA)
1000
P
D
- POWER DISSIPATION (W)
1
Power Dissipation vs
Ambient Temperature
V
CE
= 80V
V
BE
= 0
100
SOT-223
0.75
TO-92
TO-226
10
0 .5
1
0.25
0.1
0
40
80
120
160
T
J
- JUNCTION TEMPERATURE ( º C)
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration:
Figure 2.0
Machine Option “A” (H)
Machine Option “E” (J)
Style “A”, D26Z, D70Z (s/h)
Style “E”, D27Z, D71Z (s/h)
TO-92 Radial Ammo Packaging
Configuration:
Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
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