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BST40TA

Description
transistor npn 250v 0.5A SC-62
Categorysemiconductor    Discrete semiconductor   
File Size12KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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transistor npn 250v 0.5A SC-62

BST40TA Parametric

Parameter NameAttribute value
Datasheets
BST40
Product Photos
SOT89-3L
Catalog Drawings
SOT-89 Bottom
Standard Package1
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingDigi-Reel®
Transistor TypeNPN
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)250V
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Power - Max1W
Frequency - Transiti70MHz
Mounting TypeSurface Mou
Package / CaseTO-243AA
Supplier Device PackageSOT-89-3
Other NamesBST40DKR
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – JANUARY 1996
7
COMPLEMENTARY TYPE – BST15
PARTMAKING DETAIL — AT2
BST40
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
300
250
5
1
500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Input Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
C
ibo
40
70
2
30
MHz
pF
pF
MIN.
300
250
5
10
20
0.5
1.3
MAX.
UNIT
V
V
V
µA
nA
V
V
CONDITIONS.
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100µA, I
C
=0
V
EB
=5V, I
E
=0
V
CB
=300V
I
C
=50mA, I
B
=4mA
I
C
=50mA, I
B
=4mA
I
C
=20mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V,
f=5MHz
V
CB
=10V, f=1MHz
V
EB
=5V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
2%
For typical characteristics graphs see FMMTA42 datasheet.
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