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2SD1588-K-AZ

Description
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerNEC Electronics
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2SD1588-K-AZ Overview

Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

2SD1588-K-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)7 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
'$7$ 6+((7
SILICON POWER TRANSISTOR
2SD1588
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Large current capacity in small dimension: I
C(DC)
= 7 A
• Low collector saturation voltage: V
CE(sat)
= 0.5 V MAX. (@5 A)
• Ideal for use in ramp drivers or inductance drivers
• Complementary transistor: 2SB1097
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(T
C
= 25°C)
P
T
(T
A
= 25°C)
T
j
T
stg
Ratings
100
60
7.0
7.0
15
3.5
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
(OHFWURGH &RQQHFWLRQ
! %DVH
! &ROOHFWRU
! (PLWWHU
* PW
300
µ
s, duty cycle
10%
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Symbol
I
CBO
I
EBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
BE(sat)
**
Conditions
V
CB
= 80 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 3 A
V
CE
= 1.0 V, I
C
= 5 A
I
C
= 5 A, I
B
= 0.5 A
I
C
= 5 A, I
B
= 0.5 A
40
20
0.5
1.5
V
V
MIN.
TYP.
MAX.
10
10
200
Unit
µ
A
µ
A
** Pulse test PW
350
µ
s, duty cycle
2%/per pulsed
h
FE
CLASSIFICATION
Marking
h
FE1
M
40 to 80
L
60 to 120
K
100 to 200
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13174EJ1V1DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

2SD1588-K-AZ Related Products

2SD1588-K-AZ 2SD1588-L 2SD1588-L-AZ 2SD1588-M-AZ 2SD1588-K 2SD1588-AZ 2SD1588-M
Description Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code unknown compliant unknown unknown compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 7 A 7 A 7 A 7 A 7 A 7 A 7 A
Collector-emitter maximum voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 60 40 100 20 40
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1

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