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KSC1187YTA

Description
transistor npn 20v 30ma TO-92
CategoryDiscrete semiconductor    The transistor   
File Size46KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSC1187YTA Overview

transistor npn 20v 30ma TO-92

KSC1187YTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)700 MHz
Base Number Matches1
KSC1187
KSC1187
TV 1st, 2nd Picture IF Amplifier
(Forward AGC)
• High Current Gain Bandwidth Product : f
T
=700MHz
• High Power Gain : G
PE
=24dB (TYP.) at f=45MHz
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
30
20
4
30
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
f
T
C
RE
G
PE
V
AGC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Voltage
Test Condition
I
C
=10µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
C
=2mA
V
CE
=10V, I
C
=3mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=10V, I
C
=3mA
f=45MHz
G
R
= 30dB, f=45MHz
20
4.4
40
400
700
0.6
24
5.2
6.0
Min.
30
25
4
0.1
240
MHz
pF
dB
V
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

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Description transistor npn 20v 30ma TO-92 transistor npn 20v 30ma TO-92 transistor npn 20v 30ma TO-92 transistor npn 20v 30ma TO-92
Is it Rohs certified? conform to conform to conform to conform to
Maker Fairchild Fairchild Fairchild Fairchild
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N
Maximum collector current (IC) 0.03 A 0.03 A 0.03 A 0.03 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 70 70
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 700 MHz 700 MHz 700 MHz 700 MHz
Base Number Matches 1 1 1 1
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