BC213L_D27Z datasheet, PDF - EEWORLD Datasheet

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BC213L_D27Z: Descriptiontransistor pnp 30v 500ma TO-92; CategoryDiscrete semiconductor The transistor; File Size45KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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BC213L_D27Z Overview

transistor pnp 30v 500ma TO-92

BC213L_D27Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	80
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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BC213L

PNP General Purpose Amplifier

• This device is deisgned for use as general purpose amplifiers and

switches requiring collector currents to 300mA.

• Sourced from process 68.

• See PN200 for Characteristics.

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings*

=25°C unless otherwise noted

Symbol

CEO

CBO

EBO

, T

STG

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current (DC)-

- Continuous

Operating and Storage Junction Temperature Range

Parameter

Value

-30

-45

-5.0

-500

- 55 ~ 150

Units

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics

=25°C unless otherwise noted

Symbol

Off Characteristics

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

(sat)

(on)

Parameter

Test Condition

= -2mA, I

= 0

= -10µA, I

= 0

= -10µA, I

= 0

= -30V, I

= 0

= -4.0V, I

= 0

= -5V, I

= -10µA

= -5V, I

= -2.0mA

= -10mA, I

= -0.5mA

= -100mA, I

= -5.0mA

= -100mA, I

= -5.0mA

= -5.0V, I

= -2.0mA

= -5.0V, I

= -10mA

f = 100MHz

= -5.0V, I

= -200µA

= 2.0kΩ, f = 1.0KHz

= -2.0mA, V

= -5.0V

f = 1.0KHz

-0.6

200

Min.

-30

-45

-5.0

-15

Max.

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current gain Bandwidth Product

Noise Figure

Small Signal Current Gain

On Characteristics *

400

-0.25

-0.6

-1.1

-0.72

MHz

Small Signal Characteristics

* Pulse Test: Pulse Width

≤

300µs, Duty Cycle

≤

2.0%

Rev. A, August 2002

BC213L_D27Z Related Products

	BC213L_D27Z	BC213L_J35Z
Description	transistor pnp 30v 500ma TO-92	trans GP pnp 30v 500ma TO-92

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