PK40F160 datasheet, PDF - EEWORLD Datasheet

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PK40F160: DescriptionTHYRISTOR MODULE; CategoryAnalog mixed-signal IC Trigger device; File Size111KB，2 Pages; ManufacturerSanRex; Websitehttp://www.ecomallbiz.com/sanrex

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PK40F160 Overview

THYRISTOR MODULE

PK40F160 Parametric

Parameter Name	Attribute value
Maker	SanRex
package instruction	,
Reach Compliance Code	unknow
Maximum DC gate trigger current	70 mA
Maximum DC gate trigger voltage	3 V
Quick connection description	2G-2GR
Description of screw terminals	A-K-AK
Maximum holding current	50 mA
Maximum leakage current	15 mA
On-state non-repetitive peak current	1300 A
Maximum on-state voltage	1.4 V
Maximum on-state current	40000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Repeated peak reverse voltage	1600 V
Trigger device type	SCR

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THYRISTOR MODULE

(PD,PE,KK)

40F

UL:E76102 M）

（

Power Thyristor/Diode Module

PK40F

series are designed for various rectifier circuits

and power controls. For your circuit application. following internal connections and wide

voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package

and electrically isolated mounting base make your mechanical design easy.

●

T(AV)

40A, I

T(RMS)

62A, I

TSM

1300A

●

di/dt

12.5

150 A/μs

●

dv/dt 500V/μs

（Applications）

Various rectifiers

AC/DC motor drives

Heater controls

Light dimmers

Static switches

M5X10

2.8

#110TAB

A1K2

（K2）

（A2） G1

31max

19.5

80±0.2

A1K2

（K2）

（A2） G1

（A1）

■Maximum

Ratings

Symbol

Item

PK40F40

PD40F40

PE40F40

KK40F40

400

480

400

PK40F80

PD40F80

PE40F80

KK40F80

800

960

800

PK40F120

PD40F120

PE40F120

KK40F120

1200

1300

1200

PK40F160

PD40F160

PE40F160

KK40F160

1600

1700

1600

Ratings

1200

1300

7200

150

2500

−40 to ＋125

2.7（28）

170

Unit

RRM

RSM

DRM

Symbol

（

T AV）

（

T RMS）

TSM

（AV）

FGM

RGM

di／dt

ISO

Tstg

＊Repetitive

Peak Reverse Voltage

＊Non-Repetitive

Peak Reverse Voltage

Repetitive Peak Off-State Voltage

Item

＊Average

On-State Current

＊R.M.S.

On-State Current

＊Surge

On-State Current

＊I

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage (Forward)

Peak Gate Voltage (Reverse)

Critical Rate of Rise of On-State Current

＊Isolation

Breakdown Voltage (R.M.S.)

＊Operating

Junction Temperature

＊Storage

Temperature

Mounting

（M5）

Mounting

Torque

Terminal（M5）

Mass

6.5

29max

A1K2

（K2）

（A2）

Unit：

3.5

7.5 3.5

2- 6

17.5

Unit

μs

℃

N½½

（㎏f½B）

Conditions

Single phase, half wave, 180°

conduction, Tc：96℃

Single phase, half wave, 180°

conduction, Tc：96℃

cycle, 50Hz/60Hz, peak Value, non-repetitive

／

Value for one cycle of surge current

＝100mA，

Tj＝25℃，

＝

1 2

DRM

，

dt＝0.1A

／

μs

A.C.1minute

Recommended Value 1.5-2.5（15-25）

■Electrical

Characteristics

Symbol

Item

DRM

Repetitive Peak Off-State Current, max.

RRM

＊Repetitive

Peak Reverse Current, max.

＊Peak

On-State Voltage, max.

／V

Gate Trigger Current/Voltage, max.

Non-Trigger Gate, Voltage. min.

tgt

Turn On Time, max.

Critical Rate of Rise of Off-State Voltage, min.

dv／dt

Holding Current, typ.

Lutching Current, typ.

Rth j-c）＊Thermal Impedance, max.

（

＊mark：Thyristor

and Diode part. No mark：Thyristor part

Conditions

at V

DRM

, single phase, half wave, Tj＝125℃

at V

DRM

, single phase, half wave, Tj＝125℃

On-State Current 120A, Tj＝25℃ Inst. measurement

Tj＝25℃，I

＝1A，V

＝6V

Tj＝125℃，V

＝

1 2

DRM

／

＝40A，

＝100mA，

Tj＝25℃，

＝

1 2

DRM

，

dt＝0.1A

／

μs

DRM

, Exponential wave.

Tj＝125℃, V

＝／

Tj＝25℃

Junction to case

Ratings

1.40

0.25

500

100

0.55

Unit

μs

℃

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

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