PJC945
NPN Epitaxial Silicon Transistor
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OS C.
•
•
Complement to PJA733
Excellent DC Current Gain Linearly 0.1mA to 50mA
Low Output Capacitance Cob=2.5PF(Typ.) @V
CB
=6V,f=1MHz
Low Noise Figure NF=2.5dB(TYP.) I
C
=0.1mA,V
CE
=
6V Rg= 2KΩ,f=1KHz
DC Current Gain Selection Available
TO-92
SOT-23
•
•
•
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
D
P
D
Tj
Tstg
Rating
60
50
5
120
450
1.2
150
-55 ~150
Unit
V
V
V
mA
mW
W
°C
°C
P in : 1. Emitter
2. Colletor
3. Base
P in : 1. Base
2. Emitter
3. Collector
ORDERING INFORMATION
Device
PJC945CT
PJC945CX
Operating Temperature
-20℃½+85℃
Package
TO-92
SOT-23
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current-Gain-Bandwidth Product
Output Capacitance
Noise Figure
h
FE
(2)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CEO
h
FE(1)
h
FE(2)
V
CE (SAT)
V
BE (SAT)
V
BE (on)
f
T
C
Ob
NF
Test
Condition
Ic = 10µA, I
E
= 0
Ic =1.0mA, I
B
=0
I
E
=
_
10µA, I
C
= 0
V
CB
= 45V,I
E
=0
V
EB
=3V,I
C
=0
V
CE
=40V,I
B
=0
V
CE
=6V,I
c
=0.1 mA
V
CE
=6V,I
c
=1.0 mA
I
C
=10mA,I
B
=1mA
I
C
=10mA,I
B
=1mA
I
C
=0.1mA,V
CE
=6V
V
CE
=6V,I
C
=10mA
V
CB
=6V,I
E
=0
f=1MH
Z
V
CE
=6V,I
E
=
_
0.5mA
f=1KH
Z
,Rs=2KΩ
Min
80
50
5
Typ
Max
0.1
0.1
1
50
70
0.09
0.81
0.6
250
2.5
2.5
70
0.3
1
0.65
450
5
15
Unit
V
V
V
µA
µA
µA
0.55
150
V
V
V
MHz
pF
dB
CLASSIFICATION
R
70-140
P
120-240
Q
200-400
K
350-700
Classification
h
FE(2)
1-2
2002/01.rev.A
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