SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
・High
Voltage : V
CEO
=-120V.
・High
Transition Frequency : f
T
=120MHz(Typ.).
・1W(Monunted
on Ceramic Substrate).
・Small
Flat Package.
・Complementary
to KTC4373.
・Suffix
U
: Qualified to AEC-Q101.
ex) KTA1661-RTK/PU
D
K
F
F
D
KTA1661
EPITAXIAL PLANAR PNP TRANSISTOR
A
H
C
G
J
B
E
1
2
3
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
RATING
-120
-120
-5
-800
-160
500
1
150
-55½150
UNIT
V
V
V
mA
mA
mW
W
℃
℃
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
h
FE
Rank
Lot No.
P
C
* : KTA1661 mounted on ceramic substrate (250mm
2
x0.8t)
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
Classification
O:80½160,
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
(BR)EBO
h
FE
(Note)
V
CE(sat)
V
BE
f
T
C
ob
Y:120½240
TEST CONDITION
V
CB
=-120V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=-10mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CE
=-5V, I
C
=-100mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-100mA
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-120
-5.0
80
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
-
MAX.
-100
-100
-
-
240
-1.0
-1.0
-
30
V
V
MHz
pF
UNIT
nA
nA
V
V
2019. 01. 08
Revision No : 3
D
Type Name
1/2
KTA1661
I
C
- V
CE
COLLECTOR CURRENT I
C
(mA)
-800
-10m
A
-7
m
A
COMMON EMITTER
h
FE
- I
C
1k
DC CURRENT GAIN h
FE
COMMON EMITTER
V
CE
=-5V
Ta=100 C
Ta=25 C
-5mA
-4mA
-3mA
-2mA
Ta=25 C
500
300
-600
-400
100
50
30
Ta=-25 C
-200
I B=-1mA
0mA
0
0
-4
-8
-12
-16
-20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
-3
-10
-30
-100
-300
-1k
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-0.5
COLLECTOR CURRENT I
C
(mA)
-0.3
COMMON EMITTER
I
C
/I
B
=10
I
C
- V
BE
-1.0
-0.8
-0.6
-0.4
-0.2
0
COMMON EMITTER
V
CE
=-5V
Ta=100 C
-0.1
-0.05
C
00
=1
Ta
Ta=25 C
Ta=-25 C
-0.02
-3
-10
-30
-100
-300
-1k
0
-0.2
-0.4
-0.6
-0.8
Ta=-25 C
Ta=25 C
-1.0
-1.2
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR POWER DISSIPATION P
C
(W)
SAFE OPERATING AREA
-3k
COLLECTOR CURRENT I
C
(mA)
-1k
-300
-100
-30
-10
-3
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I
C
MAX(PULSE)
I
C
MAX
(CONTINUOUS)
DC
OP
10
0m
Pc - Ta
1.2
1
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm
2
x0.8t)
2 Ta=25 C
s
1m
10
m
s
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
2
s
ER
AT
IO
N
-1
-0.3
-1
-3
-10
-30
-100
-300
80
100
120
140
160
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
AMBIENT TEMPERATURE Ta ( C)
2019. 01. 08
Revision No : 3
2/2
Robotics Development
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