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KTC3879Y

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size74KB,1 Pages
ManufacturerBytesonic Corporation
Download Datasheet Parametric Compare View All

KTC3879Y Overview

Transistor

KTC3879Y Parametric

Parameter NameAttribute value
MakerBytesonic Corporation
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.05 A
Collector-based maximum capacity3.2 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.15 W
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.4 V
Base Number Matches1
SOT-23 Plastic-Encapsulate Transistors
SOT-23
KTC3879
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1.0
0.15
W (Tamb=25℃)
0.95
2.4
1.3
Collector current
I
CM:
0.05
A
Collector-base voltage
V
(BR)CBO
:
35
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
2.9
1.9
0.95
Unit:
0.4
mm
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
100
µA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
30
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
12
V, I
C
=
2
mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
10
mA, I
B
=
1
mA
V
CE
=
10
V, I
C
=
1
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
CC
=
6
V, I
c
=
1
mA,
f=
10.7M
HZ
35
30
4
0.1
1
40
240
0.4
1
100
1.4
400
3.2
µA
µA
V
V
MHz
pF
f
T
C
ob
Power Gain
Gpe
27
33
dB
CLASSIFICATION OF
Rank
Range
Marking
h
FE
R
40-80
RR
O
70-140
RO
Y
120-240
RY

KTC3879Y Related Products

KTC3879Y KTC3879O
Description Transistor Transistor
Maker Bytesonic Corporation Bytesonic Corporation
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.05 A 0.05 A
Collector-based maximum capacity 3.2 pF 3.2 pF
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 70
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power consumption environment 0.15 W 0.15 W
Maximum power dissipation(Abs) 0.15 W 0.15 W
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.4 V 0.4 V
Base Number Matches 1 1
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