KSP24
KSP24
VHF Transistor
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
I
EBO
I
C
P
C
T
J
T
STG
R
TH
(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
a
=25°C)
Derate Above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Ambient
Parameter
Value
40
30
4.0
100
350
2.8
135
-55~150
357
Units
V
V
V
mA
mW
mW/°C
°C
°C
°C/W
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
f
T
C
ob
G
CE
G
CE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Conversion Gain (213 to 45MHz)
Conversion Gain (60 to 45MHz)
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=15V, I
E
=0
V
CE
=10V, I
C
=8mA
V
CE
=10V, I
C
=8mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=20V, I
C
=8mA
Oscillator Injection=150mV
V
CC
=20V, I
C
=8mA
Oscillator Injection=150mV
19
24
30
400
620
0.25
24
29
0.36
MHz
pF
dB
dB
Min.
40
30
4.0
50
Typ.
Max.
Units
V
V
V
nA
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSP24
Typical Characteristics
V
CE
= 10V
V
CE
(sat),V
BE
(sat)[mA], SATURATION VOLTAGE
1000
10000
I
C
= 10I
B
h
FE
, DC CURRENT GAIN
100
1000
V
BE
(sat)
V
CE
(sat)
100
10
1
0.1
1
10
100
1000
10
0.1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10k
40
V
CE
= 10V
f = 100MHz
OSCInj = 150mVrms
G
PC
[dB], CONVERSION GAIN
f
sig
= 60MHz,
f
osc
= 104MHz
30
1k
20
f
sig
= 213MHz,
f
osc
= 275MHz
100
10
10
1
10
100
0
0
2
4
6
8
10
12
14
16
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product
Figure 4. Conversion Gain versus Collector Current
40
50
I
C
= 8mA
DC
G
PC
[dB], CONVERSION GAIN
y
ie
[ ], INPUT ADMITTANCE
f
sig
= 60MHz,
f
osc
= 104MHz
40
213MHz
60MHz
g
ie
30
30
20
f
sig
= 213MHz,
f
osc
= 275MHz
20
b
ie
g
ie
Ω
10
10
b
ie
0
0
100
200
300
400
0
0
2
4
6
8
10
12
14
16
18
20
V
i
[mV], OSCILLATION INJECTION
I
C
[mA], COLLECTOR CURRENT
Figure 5. Conversion Gain versus Injection Level
Figure 6. Input Admittance
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSP24
Typical Characteristics
(Continued)
0.10
240
], FORWARD TRANSFER ADMITTANCE
], REVERSE TRANSFER ADMITTANCE
f = 45MHz
0.08
f = 45MHz
200
g
fe
-b
re
0.06
160
b
fe
120
0.04
g
re
< -0.01[mmho]
0.02
80
40
Ω
y
re
[
y
fe
[
], OUTPUT ADMITTANCE
y
ce
[
©2001 Fairchild Semiconductor Corporation
Ω
0.00
0
2
4
6
8
10
12
14
16
18
20
0
0
2
4
6
8
10
12
14
16
18
20
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 7. Reverse Transfer Admittance
Figure 8. Forward Transfer Admittance
1.0
f = 45MHz
0.8
0.6
g
oe
0.4
Ω
0.2
b
oe
0.0
0
2
4
6
8
10
12
14
16
18
20
I
C
[mA], COLLECTOR CURRENT
Figure 9. Output Admittance
Rev. A1, June 2001
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
Real-time operating system RTOS
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