BCX19TC datasheet, PDF - EEWORLD Datasheet

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BCX19TC: Descriptiontransistor npn med pwr sot23-3; Categorysemiconductor Discrete semiconductor; File Size35KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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BCX19TC Overview

transistor npn med pwr sot23-3

BCX19TC Parametric

Parameter Name	Attribute value
Datasheets
BCX19
Product Photos
SOT23
Standard Package	10,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single
Packaging	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Vce Saturation (Max) @ Ib, Ic	620mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V
Power - Max	330mW
Frequency - Transiti	200MHz
Mounting Type	Surface Mou
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS –

BCX19 -

BCX19R -

BCX17

U1

U4

BCX19

COMPLEMENTARY TYPES -

C

B

E

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Peak Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CES

V

CEO

V

EBO

I

CM

I

C

I

B

I

BM

P

TOT

T

j

:T

stg

VALUE

50

45

5

1000

500

100

200

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base Cut-Off

Current

Emitter-Base Cut-Off

Current

Base-Emitter Voltage

Collector-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

SYMBOL

I

CBO

MIN.

TYP.

MAX. UNIT

100

200

10

nA

µ

A

CONDITIONS.

V

CB

=20V

V

CB

=20V, T

j

=150°C

V

EB

=5V

I

EBO

µ

A

V

BE

V

CE(sat)

1.2

620

V

mV

I

C

=500mA, V

CE

=1V*

I

C

=500mA, I

B

=50mA*

I

C

=10

0

mA, V

CE

=1V

I

C

=300mA, V

CE

=1V*

I

C

=500mA, V

CE

=1V*

h

FE

100

70

40

200

600

Transition Frequency

f

T

MHz

I

C

=10mA, V

CE

=5V

f =35MHz

V

CB

=10V, f =1MHz

Output Capacitance

C

obo

5.0

pF

*Measured under pulsed conditions.

TBA

BCX19TC Related Products

	BCX19TC	BCX19TA
Description	transistor npn med pwr sot23-3	trans med pwr npn 45v sot23-3
Standard Package	10,000	3,000
Category	Discrete Semiconductor Products	Discrete Semiconductor Products
Family	Transistors (BJT) - Single	Transistors (BJT) - Single
Packaging	Tape & Reel (TR)	Tape & Reel (TR)
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	500mA	500mA
Voltage - Collector Emitter Breakdown (Max)	45V	45V
Vce Saturation (Max) @ Ib, Ic	620mV @ 50mA, 500mA	620mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V	100 @ 100mA, 1V
Power - Max	330mW	330mW
Frequency - Transiti	200MHz	200MHz
Mounting Type	Surface Mou	Surface Mou
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3	SOT-23-3

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