FM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM
Connection Diagrams
27C010
FM27C040
XX/V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
27C010
XX/V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
Note:
V
CC
A18
A17
A14
A13
A8
A9
A11
OE
A10
CE/PGM
O7
O6
O5
O4
O3
V
CC
XX/PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3
Compatible EPROM pin configurations are shown in the blocks adjacent to the FM27C040 pin.
Commercial Temperature Range
(0
°
C to +70
°
C) V
CC
= 5V
±
10%
Parameter/Order Number
FM27C040 Q, V 90
FM27C040 Q, V 120
FM27C040 Q, V 150
Extended Temperature Range
(-40
°
C to +85
°
C) V
CC
= 5V
±
10%
Parameter/Order Number
FM27C040 QE, VE 90
FM27C040 QE, VE 120
FM27C040 QE, VE 150
Package Types: FM27C040 Q,V XXX
Access Time (ns)
90
120
150
Access Time (ns)
90
120
150
Pin Names
A0–A18
CE/PGM
OE
O0–O7
XX
Addresses
Chip Enable/Program
Output Enable
Outputs
Don’t Care (During Read)
Q = Quartz-Windowed Ceramic DIP
V = PLCC
• All packages conform to the JEDEC standard.
• All versions are guaranteed to function for slower speeds.
2
FM27C040 Rev. B
www.fairchildsemi.com
FM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM
Absolute Maximum Ratings
(Note 1)
Storage Temperature
All Input Voltages except A9 with
Respect to Ground
V
PP
and A9 with Respect to Ground
V
CC
Supply Voltage with
Respect to Ground
ESD Protection
-65°C to +150°C
All Output Voltages with
Respect to Ground
V
CC
+1.0V to GND - 0.6V
Operating Range
-0.6V to +7V
-0.6V to +14V
-0.6V to +7V
>2000V
Range
Commercial
Industrial
Temperature
0°C to +70°C
-40°C to +85°C
V
CC
+5V
+5V
Tolerance
±10%
±10%
Read Operation
DC Electrical Characteristics
Over operating range with V
PP
= V
CC
Symbol
V
IL
V
IH
V
OL
V
OH
I
SB1
I
SB2
I
CC
I
PP
V
PP
I
LI
I
LO
Parameter
Input Low Level
Input High Level
Output Low Voltage
Output High Voltage
V
CC
Standby Current (CMOS)
V
CC
Standby Current
V
CC
Active Current
V
PP
Supply Current
V
PP
Read Voltage
Input Load Current
Output Leakage Current
Test Conditions
Min
-0.5
2.0
Max
0.8
V
CC
+1
0.4
Units
V
V
V
V
I
OL
= 2.1 mA
I
OH
= -2.5 mA
CE = V
CC
±
0.3V
CE = V
IH
CE = OE = V
IL
,
I/O = 0 mA
V
PP
= V
CC
V
CC
- 0.4
V
IN
= 5.5V or GND
V
OUT
= 5.5V or GND
-1
-10
f=5 MHz
3.5
100
1
30
10
V
CC
1
10
µA
mA
mA
µA
V
µA
µA
AC Electrical Characteristics
Over operating range with V
PP
= V
CC
Symbol
t
ACC
t
CE
t
OE
t
DF
(Note 2)
t
OH
(Note 2)
Parameter
Min
Address to Output Delay
CE to Output Delay
OE to Output Delay
Output Disable to
Output Float
Output Hold from Addresses
CE or OE , Whichever
Occurred First
0
90
Max
90
90
50
45
0
120
Min
Max
120
120
50
45
0
150
Min
Max
150
150
50
55
Units
ns
Capacitance
T
A
= +25°C, f = 1 MHz (Note 2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ
9
12
Max
15
15
Units
pF
pF
3
FM27C040 Rev. B
www.fairchildsemi.com
FM27C040 4,194,304-Bit (512K x 8) High Performance CMOS EPROM
AC Test Conditions
Output Load
1 TTL Gate and C
L
= 100 pF (Note 8)
≤5
ns
0.45V to 2.4V
Input Rise and Fall Times
Input Pulse Levels
Timing Measurement Reference Level (Note 10)
Inputs
0.8V and 2V
Outputs`
0.8V and 2V
AC Waveforms
(Notes 6, 7, 9)
ADDRESSES
2V
0.8V
Addresses Valid
CE
2V
0.8V
t CE
t CF
(Note 4, 5)
OE
2V
0.8V
t OE
(Note 3)
t DF
(Note 4, 5)
Valid Output
Hi-Z
t OH
OUTPUT
2V
0.8V
Hi-Z
t ACC
(Note 3)
Note 1:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2:
This parameter is only sampled and is not 100% tested.
Note 3:
OE may be delayed up to t
ACC
- t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4:
The t
DF
and t
CF
compare level is determined as follows:
High to TRI-STATE
®
, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5:
TRI-STATE may be attained using OE or CE .
Note 6:
The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1
µF
ceramic capacitor be used on every device
between V
CC
and GND.
Note 7:
The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8:
1 TTL Gate: I
OL
= 1.6 mA, I
OH
= -400
µA.
C
L
: 100 pF includes fixture capacitance.
Note 9:
V
PP
may be connected to V
CC
except during programming.
Note 10:
Inputs and outputs can undershoot to -2.0V for 20 ns Max.
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