KSB794/795
KSB794/795
Audio Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Volage
: KSB794
: KSB795
V
CEO
Collector-Emitter Volage
: KSB794
: KSB795
V
EBO
I
C
I
CP
I
B
P
C
P
C
TJ
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 60
- 80
-8
- 1.5
-3
- 0.15
1
10
150
- 55 ~ 150
V
V
V
A
A
A
W
W
°C
°C
R1
.
= 10 kΩ
R2
.
= 500Ω
Value
- 60
- 80
Units
V
V
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
Parameter
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Test Condition
V
CB
= - 60V, I
E
= 0
V
CE
= - 60V, R
BE
= 51Ω @ T
C
= 125°C
V
CE
= - 60V, V
BE
(off) = 1.5V
V
CE
= - 60V, V
BE
(off) = 1.5V
@ T
C
= 125°C
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 1A
I
C
= - 1A, I
B
= - 1mA
I
C
= - 1A, I
B
= - 1mA
1000
2000
Min.
Max.
- 10
-1
- 10
-1
-1
30000
-1.5
-2
V
V
Units
µA
mA
µA
mA
mA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed.
h
FE
Classificntion
Classification
h
FE2
R
2000 ~ 5000
O
4000 ~ 10000
Y
8000 ~ 30000
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSB794/795
Typical Characteristics
I
B
=-100
0uA
I
B
=
-5
00
uA
-2.0
-1.8
100000
-3
I
B
=
uA
00
I
C
(A), COLLECTOR CURRENT
-1.6
-1.4
-1.2
-1.0
-0.8
0uA
-2 0
I
B
=
h
FE
, DC CURRENT GAIN
I
B
=-
uA
150
V
CE
=-2V
Plused
10000
I
B
=-100uA
I
B
=-80uA
-0.6
-0.4
-0.2
-0.0
-0.0
1000
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
100
-0.01
-0.1
-1
-10
V
CE
(V), COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
10
V
CE(SAT)
. V
BE(SAT)
[V], SATURATION VOLTAGE
I
C
=2000I
B
Single pulse
s
0u
=3
PW 0us
10
I
C
(A), COLLECTOR CURRENT
V
BE
(SAT)
1
-1
3m 1ms
s
Dis
DC
sip
atio
nL
imi
ted
30
0u
s
V
CE
(SAT)
S/
b
0.1
Lim
ite
d
-0.1
-0.1
-1
0.01
1
10
100
I
C
[A],COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
160
14
140
12
120
100
P
D
[W], POWER DISSIPATION
125
150
175
200
dT[%], I
C
DERATING
10
8
80
60
S/b
Lim
ited
6
40
Di
ss
ipa
tio
n
4
20
Lim
ite
d
2
0
0
25
50
75
100
0
0
25
50
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
O
T
C
[ C], CASE TEMPERATURE
o
Figure 5. Derating Curve of Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
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DOME™
EcoSPARK™
E
2
CMOS™
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FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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