KSB1015
KSB1015
Low Frequency Power Amplifier
• Low Collector Emitter Saturation Voltage
• Complement to KSD1406
1
TO-220F
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
- 60
- 60
-7
-3
- 0.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= - 50mA, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
EB
= - 7V, I
C
= 0
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.3A
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
V
CC
= - 30V, I
C
= - 1A
I
B1
= -I
B2
= -0.2A
R
L
= 30Ω
60
20
- 0.5
- 0.7
9
150
0.4
1.7
0.5
Min.
- 60
Typ.
Max.
- 100
- 100
200
-1
-1
V
V
MHz
pF
µs
µs
µs
Units
V
µA
µA
h
FE
Classification
Classification
h
FE1
O
60 ~ 120
Y
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB1015
Typical Characteristics
-5
1k
V
CE
= -5V
I
C
[A], COLLECTOR CURRENT
-4
h
FE
, DC CURRENT GAIN
100
-3
I
B
= -80mA
B
= -70mA
I
I
B
= -60mA
I
B
= -50mA
I
B
= -40mA
I
B
= -30mA
-2
10
I
B
= -20mA
-1
I
B
= -10mA
I
B
= 0
-0
-0
-1
-2
-3
-4
-5
1
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-4
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
= 10 I
B
V
CE
= -5V
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-3
-1
-2
-0.1
-1
-0.01
-0.01
-0
-0.0
-0.4
-0.8
-1.2
-1.6
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
40
I
C
max(pulse)
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-100
I
C
max(DC)
100
1 0
mS
ms
35
1m
S
30
DC
-1
V
CEO
MAX
1S
25
20
15
10
5
-0.1
-1
-10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
DSP and ARM Processors
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