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BYG80E

Description
DIODE 1.5 A, 250 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size66KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYG80E Overview

DIODE 1.5 A, 250 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYG80E Parametric

Parameter NameAttribute value
MakerNXP
package instructionR-PDSO-J2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationULTRA FAST RECOVERY MEDIUM POWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-J2
Maximum non-repetitive peak forward current32 A
Number of components1
Phase1
Number of terminals2
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
technologyAVALANCHE
Terminal formJ BEND
Terminal locationDUAL
Base Number Matches1

BYG80E Related Products

BYG80E BYG80E-T
Description DIODE 1.5 A, 250 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1.5 A, 250 V, SILICON, RECTIFIER DIODE, Rectifier Diode
Maker NXP NXP
package instruction R-PDSO-J2 R-PDSO-J2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
application ULTRA FAST RECOVERY MEDIUM POWER ULTRA FAST RECOVERY MEDIUM POWER
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-J2 R-PDSO-J2
Maximum non-repetitive peak forward current 32 A 32 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum output current 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 250 V 250 V
Maximum reverse recovery time 0.05 µs 0.05 µs
surface mount YES YES
technology AVALANCHE AVALANCHE
Terminal form J BEND J BEND
Terminal location DUAL DUAL
Base Number Matches 1 1
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