BC516_J35Z datasheet, PDF - EEWORLD Datasheet

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BC516_J35Z: Descriptiontrans pnp darl 30v 1A TO-92; Categorysemiconductor Discrete semiconductor; File Size23KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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BC516_J35Z Overview

trans pnp darl 30v 1A TO-92

BC516_J35Z Parametric

Parameter Name	Attribute value
Datasheets
BC516
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package	2,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single
Packaging	Bulk
Transistor Type	PNP - Darling
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	30V
Vce Saturation (Max) @ Ib, Ic	1V @ 100µA, 100mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 20mA, 2V
Power - Max	625mW
Frequency - Transiti	200MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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BC516

PNP Darlington Transistor

• This device is designed for applications reguiring extremely high

current gain at currents to 1mA.

• Sourced from process 61.

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CEO

CBO

EBO

, T

STG

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

- Continuous

= 25°C

Value

625

-55 ~ +150

Units

°C

Operating and Storage Junction Temperature Range

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CEO

CBO

EBO

CBO

(sat)

(on)

Parameter

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product (2)

Test Condition

= 2mA, I

= 0

= 100µA, I

= 0

= 10µA, I

= 0

= 30V, I

= 0

= 20mA, V

= 2V

= 100mA, I

= 0.1mA

= 10mA, V

= 5V

= 10mA, V

= 5V, f = 100MHz

200

30,00

1.4

Min.

100

Typ.

Max.

Units

NOTES:

1. Pulse Test Pulse Width

≤

2. f

= Ih

I · f

test

Thermal Characteristics

=25°C unless otherwise noted

Symbol

θJA

θJC

Parameter

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Max.

200

83.3

Units

°C/W

Rev. A1, August 2002

BC516_J35Z Related Products

	BC516_J35Z	BC516_D75Z	BC516_L34Z
Description	trans pnp darl 30v 1A TO-92	trans darl pnp 30v 1A TO-92	trans darl pnp 30v 1A TO-92
Standard Package	2,000	2,000	-
Category	Discrete Semiconductor Products	Discrete Semiconductor Products	-
Family	Transistors (BJT) - Single	Transistors (BJT) - Single	-
Packaging	Bulk	Tape & Box (TB)	-
Transistor Type	PNP - Darling	PNP - Darling	-
Current - Collector (Ic) (Max)	1A	1A	-
Voltage - Collector Emitter Breakdown (Max)	30V	30V	-
Vce Saturation (Max) @ Ib, Ic	1V @ 100µA, 100mA	1V @ 100µA, 100mA	-
DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 20mA, 2V	30000 @ 20mA, 2V	-
Power - Max	625mW	625mW	-
Frequency - Transiti	200MHz	200MHz	-
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	-
Supplier Device Package	TO-92-3	TO-92-3	-

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