SM-8 BIPOLAR TRANSISTOR H-BRIDGE
ZHB6792
PRELIMINARY DATA SHEET ISSUE A MAY 1998
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 70V supply
* 1 Amp continuous rating
PARTMARKING DETAIL – ZHB6792
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPNs
70
70
5
2
1
PNPs
-70
-70
-5
-2
-1
UNIT
V
V
V
A
A
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C
1,
C
2
B1
Q1
Q4
B4
B
1
B
2
E
2
,E
3
B
3
5
E
1
,E
4
C
3
,C
4
6
7
C1, C2
C3, C4
B2
Q2
Q3
B3
B
4
E2, E3
8
1
2
3
4
ZHB6792
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
SYMBOL
P
tot
1.25
2
10
16
100
62.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
VALUE
UNIT
100
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
t1
80
tP
D=t1
tP
60
t1
50
40
30
20
10
0
100us
tP
D=t1
tP
60
40
20
0
100us
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
1ms
10ms 100ms
1s
10s
100s
1ms
10ms 100ms
1s
10s
100s
Pulse Width
Pulse Width
Transient Thermal Resistance
Single Transistor "On"
2.0
10
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
Max Power Dissipation - (Watts)
1.5
Du
al
Power Dissapation (W)
Dual Transistors †
Single Transistor
1.0
Sin
gle
1
Full Copper
Minimum
Copper
Dual Transistors †
Single Transistor
0.5
0
0
20
40
60
80
100
120
140
160
0.1
0.1
1
10
T - Temperature (°C)
Pcb Area (inches squared)
Derating curve
Pd v Pcb Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
ZHB6792
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
300
250
200
100
225
22
35
750
-0.75
800
MIN.
-75
-70
-5
-0.1
-0.1
-0.45
-0.5
-0.95
TYP.
MAX.
UNIT
V
V
V
µA
µA
V
V
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-40V
V
EB
=-4V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
I
C
=-1A, I
B
=-25mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
MHz
pF
pF
ns
ns
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
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