KTA1718D-Y datasheet, PDF - EEWORLD Datasheet

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KTA1718D-Y: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size413KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1718D-Y Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3

KTA1718D-Y Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	10 W
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

POWER AMPLIFIER APPLICATION.

POWER SWITCHING APPLICATION.

A

KTA1718D/L

EPITAXIAL PLANAR PNP TRANSISTOR

I

J

FEATURES

Low Collector Saturation Voltage

: V

CE(sat)

=-0.5V(Max.) (I

C

=-1A)

C

K

Complementary to KTC2815D/L.

E

M

High Speed Switching Time : t

stg

=1 S(Typ.)

H

F

1

2

F

3

P

L

DIM

A

B

C

D

E

F

H

I

J

K

L

M

O

P

Q

MILLIMETERS

_

6.60 + 0.2

_

6.10 + 0.2

_

5.0 + 0.2

_

1.10 + 0.2

_

2.70 + 0.2

_

2.30 + 0.1

1.00 MAX

_

2.30 + 0.2

_

0.5 + 0.1

_

2.00 + 0.20

_

0.50 + 0.10

_

0.91+ 0.10

_

0.90 + 0.1

_

1.00 + 0.10

0.95 MAX

Q

B

D

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power

Dissipation

Junction Temperature

Storage Temperature Range

Ta=25

Tc=25

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

RATING

-50

-5

-2

1.0

10

150

-55 150

UNIT

V

A

W

1. BASE

2. COLLECTOR

3. EMITTER

DPAK

A

C

I

J

D

O

H

G

P

F

L

1

2

3

DIM

A

B

C

D

E

F

G

H

I

J

K

L

P

Q

MILLIMETERS

_

6.60

+

0.2

_

6.10

+

0.2

_

5.0

+

0.2

_

1.10

+

0.2

_

9.50

+

0.6

_

2.30

+

0.1

_

0.76

+

0.1

1.0 MAX

_

2.30

+

0.2

_

0.5

+

0.1

_

2.0

+

0.2

_

0.50

+

0.1

_

1.0

+

0.1

0.90 MAX

Q

K

1. BASE

2. COLLECTOR

3. EMITTER

E

B

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn On Time

Switching

Time

Storage Time

Fall Time

Note : h

FE

(1) Classification

2003. 3. 27

O:70~140, Y:120~240.

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

h

FE

(1) (Note)

h

FE

2

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

TEST CONDITION

V

CB

=-50V, I

E

=0

V

EB

=-5V, I

C

=0

I

C

=-10mA, I

B

=0

V

CE

=-2V, I

C

=-0.5A

V

CE

=-2V, I

C

=-1.5A

I

C

=-1A, I

B

=-0.05A

I

C

=-1A, I

B

=-0.05A

V

CE

=-2V, I

C

=-0.5A

V

CB

=-10V, I

E

=0, f=1MHz

20µs

I

B2

I

B1

INPUT

OUTPUT

I

B2

30Ω

I

B1

-I

B1

=I

B2

=0.05A

DUTY CYCLE < 1%

=

V

CC

=-30V

IPAK

MIN.

-

-50

70

40

-

TYP. MAX. UNIT

-

100

30

0.1

1.0

0.1

-0.1

-

240

-

-0.5

-1.2

-

S

A

V

MHz

pF

Revision No : 3

1/3

KTA1718D-Y Related Products

	KTA1718D-Y	KTA1718L-O	KTA1718L-Y	KTA1718D-O
Description	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3
Maker	KEC	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	70	120	70
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	3	3	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	10 W	10 W	10 W	10 W
surface mount	YES	NO	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	1

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