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KTA1718L-Y

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size413KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KTA1718L-Y Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3

KTA1718L-Y Parametric

Parameter NameAttribute value
MakerKEC
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
A
KTA1718D/L
EPITAXIAL PLANAR PNP TRANSISTOR
I
J
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) (I
C
=-1A)
C
K
Complementary to KTC2815D/L.
E
M
High Speed Switching Time : t
stg
=1 S(Typ.)
H
F
1
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
Q
B
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
-50
-50
-5
-2
1.0
10
150
-55 150
UNIT
V
V
V
A
W
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
A
C
I
J
D
O
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
Q
K
1. BASE
2. COLLECTOR
3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn On Time
Switching
Time
Storage Time
Fall Time
Note : h
FE
(1) Classification
2003. 3. 27
O:70~140, Y:120~240.
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-10mA, I
B
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
I
C
=-1A, I
B
=-0.05A
I
C
=-1A, I
B
=-0.05A
V
CE
=-2V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
20µs
I
B2
I
B1
INPUT
OUTPUT
I
B2
30Ω
I
B1
-I
B1
=I
B2
=0.05A
DUTY CYCLE < 1%
=
V
CC
=-30V
IPAK
MIN.
-
-
-50
70
40
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
-
-
-
100
30
0.1
1.0
0.1
-0.1
-0.1
-
240
-
-0.5
-1.2
-
-
-
-
-
S
A
A
V
V
V
MHz
pF
Revision No : 3
1/3

KTA1718L-Y Related Products

KTA1718L-Y KTA1718D-Y KTA1718L-O KTA1718D-O
Description Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3 Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3 Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3 Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3
Maker KEC KEC KEC KEC
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 70 70
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 3 2 3 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 10 W 10 W 10 W 10 W
surface mount NO YES NO YES
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1
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