TC1265
800 mA Fixed-Output CMOS LDO with Shutdown
Features
•
•
•
•
•
•
•
Very Low Dropout Voltage
800 mA Output Current
High Output Voltage Accuracy
Standard or Custom Output Voltages
Overcurrent and Overtemperature Protection
SHDN Input for Active Power Management
ERROR Output Can Be Used as a Low Battery
Detector (SOIC only)
Description
The TC1265 is a fixed-output, high-accuracy (typically
±0.5%) CMOS low dropout regulator. Designed
specifically for battery-operated systems, the TC1265’s
CMOS construction eliminates wasted ground current,
significantly extending battery life. Total supply current
is typically 80 µA at full load (20 to 60 times lower than
in bipolar regulators).
Key features of the TC1265 include ultra low noise
operation, very low dropout voltage (typically 450 mV
at full load) and fast response to step changes in load.
The TC1265 incorporates both overtemperature and
overcurrent protection. The TC1265 is stable with an
output capacitor of only 1 µF and has a maximum
output current of 800 mA. It is available in 8-Pin SOIC,
5-Pin TO-220 and 5-Pin DDPAK packages.
Applications
•
•
•
•
•
•
•
Battery-operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
Package Type
5-Pin DDPAK
Front View
Tab Is GND
5-Pin TO-220
Tab Is GND
Typical Application
TC1265
V
IN
V
IN
V
OUT
TC1265
+
V
OUT
C
1
1 µF
SHDN
BYP
SHDN
GND
V
IN
V
OUT
BYP
SHDN
GND
V
IN
V
OUT
1 2 3 4 5
1 2 3 4 5
TC1265
GND
SHDN
8-Pin SOIC
V
OUT
GND
NC
BYPASS
1
2
3
4
8
7
6
5
V
IN
NC
SHDN
ERROR
TC1265
2004 Microchip Technology Inc.
DS21376C-page 1
TC1265
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
Input Voltage .........................................................6.5V
Output Voltage.................. (V
SS
– 0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited
(Note 7)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range...... -40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1.5V,
(Note 1),
I
L
= 100 µA, C
L
= 3.3 µF,
SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output Current
Output Voltage
Sym
V
IN
I
OUTMAX
V
OUT
∆V
OUT
/∆T
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
V
IN
–V
OUT
Min
2.7
800
V
R
– 2.5%
V
R
– 2%
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
(Note 4)
Dropout Voltage
(Note 5)
—
—
-0.01
—
—
—
—
—
—
—
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
I
DD
I
SHDN
PSRR
I
OUTSC
∆V
OUT
/∆P
D
eN
—
—
—
—
—
—
Typ
—
—
Max
6.0
—
Units
V
mA
V
V
R
≥
2.5V
V
R
= 1.8V
ppm/°C
%
%/mA
mV
Note 3
(V
R
+ 1V)
≤
V
IN
≤
6V
I
L
= 0.1 mA to I
OUTMAX
V
R
≥
2.5V, I
L
= 100 µA
I
L
= 100 mA
I
L
= 300 mA
I
L
= 500 mA
I
L
= 800 mA
V
R
= 1.8V, I
L
= 500 mA
I
L
= 800 mA
µA
µA
db
mA
V/W
nV/√Hz
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
≤
1 kHz
V
OUT
= 0V
Note 6
I
L
= I
OUTMAX
, F = 10 kH
Z
Note 2
Conditions
V
R
± 0.5%
V
R
+ 2.5%
V
R
± 0.5%
40
0.007
0.002
20
50
150
260
450
700
890
80
0.05
64
1200
0.04
260
V
R
+ 3%
—
0.35
+0.01
30
160
480
800
1300
1000
1400
130
1
—
1400
—
—
Note 1:
V
R
is the regulator output voltage setting.
2:
The minimum V
IN
has to justify the conditions: V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUTMAX
.
6
3:
(
V
–
V
)
–
10
OUTMAX
OUTMIN
-
TCV
OUT
= ------------------------------------------------------------------------
V
OUT
× ∆
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects
are covered by the thermal regulation specification.
5:
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value
measured at a 1.5V differential.
6:
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipa-
tion causes the device to initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
8:
Hysteresis voltage is referenced to V
R
.
DS21376C-page 2
2004 Microchip Technology Inc.
TC1265
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1.5V,
(Note 1),
I
L
= 100 µA, C
L
= 3.3 µF,
SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
SHDN Input
SHDN Input High Threshold
SHDN Input Low Threshold
ERROR Output (SOIC Only)
Minimum Operating Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
V
MIN
V
OL
V
TH
V
HYS
1.0
—
—
—
—
—
0.95 x V
R
50
—
400
—
—
V
mV
V
mV
Note 8
1 mA Flows to ERROR
V
IH
V
IL
45
—
—
—
—
15
%V
IN
%V
IN
Sym
Min
Typ
Max
Units
Conditions
Note 1:
V
R
is the regulator output voltage setting.
2:
The minimum V
IN
has to justify the conditions: V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUTMAX
.
6
3:
(
V
–
V
)
–
10
OUTMAX
OUTMIN
-
TCV
OUT
= ------------------------------------------------------------------------
V
OUT
× ∆
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects
are covered by the thermal regulation specification.
5:
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value
measured at a 1.5V differential.
6:
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipa-
tion causes the device to initiate thermal shutdown. Please see
Section 5.0 “Thermal Considerations”
for more details.
8:
Hysteresis voltage is referenced to V
R
.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
IN
= V
R
+ 1.5V, I
L
= 100 µA, C
L
= 3.3 µF,
SHDN > V
IH
, T
A
= +25°C.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-DDPAK
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-SOIC
Note 1:
θ
JA
θ
JA
θ
JA
—
—
—
57
71
163
—
—
—
°C/W
°C/W
°C/W
T
A
T
J
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
(Note 1)
Sym
Min
Typ
Max
Units
Conditions
Operation in this range must not cause T
J
to exceed Maximum Junction Temperature (+125°C).
2004 Microchip Technology Inc.
DS21376C-page 3
TC1265
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
0.018
LINE REGULATION (%)
0.016
0.014
IDD (µA)
150
135
120
105
90
75
60
45
30
15
0
-40°C
VOUT = 3V
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-40
°
C
0
°
C
25
°
C
70
°
C
85
°
C
125
°
C
0°C
25°C
70°C
85°C
125°C
TEMPERATURE (
°
C)
TEMPERATURE (°C)
FIGURE 2-1:
Temperature.
10.0
Line Regulation vs.
FIGURE 2-4:
I
DD
vs. Temperature.
NOISE (µV/√Hz)
1.0
DROPOUT VOLTAGE (V)
R
LOAD
= 50Ω
C
OUT
= 1µF
0.600
0.550
0.500
0.450
0.400
0.350
0.300
0.250
0.200
0.150
0.100
0.050
0.000
85°C
70°C
25°C
125°C
0°C
-40°C
0.1
0.0
0.01
0.01
1
10
100
1000
0 100 200 300 400 500 600 700 800
ILOAD (mA)
FREQUENCY (kHz)
FIGURE 2-2:
Output Noise vs. Frequency.
FIGURE 2-5:
I
LOAD
.
3.030
3.020
3.010
3.000
VOUT (V)
2.990
2.980
2.970
2.960
2.950
2.940
2.930
2.920
-40
°
C
3.0V Dropout Voltage vs.
0.0100
LOAD REGULATION (%/mA)
0.0090
0.0080
0.0070
0.0060
0.0050
0.0040
0.0030
0.0020
0.0010
0.0100
-40°C
0°C
25°C
70°C
85°C
125°C
VOUT
=
3V
1 mA to 800 mA
ILOAD =
0.1mA
ILOAD =
ILOAD =
300mA
500mA
ILOAD =
800mA
0
°
C
25
°
C
70
°
C
85
°
C 125
°
C
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 2-3:
Temperature.
Load Regulation vs.
FIGURE 2-6:
3.0V V
OUT
vs.Temperature.
DS21376C-page 4
2004 Microchip Technology Inc.
TC1265
2.0
TYPICAL PERFORMANCE CURVES (CONT)
0.090
0.080
0.070
ISHDN (µA)
0.060
0.050
0.040
0.030
0.020
0.010
0.000
-40°C
0°C
25°C
70°C
85°C
125°C
TEMPERATURE (°C)
FIGURE 2-1:
I
SHDN
vs. Temperature.
2004 Microchip Technology Inc.
DS21376C-page 5
MCU
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