5.0 mm x 3.2 mm Package Pinout ............................................................................................................................................... 1
Ordering Information .................................................................................................................................................................... 2
Device Configurations and Pin-outs ............................................................................................................................................. 8
Pin-out Top Views................................................................................................................................................................. 8
Test Circuit Diagrams for LVCMOS Outputs ................................................................................................................................ 9
Frequency Stability ............................................................................................................................................................. 12
Output Frequency and Format ............................................................................................................................................ 12
Output Frequency Tuning ................................................................................................................................................... 12
Pin 1 Configuration (OE, VC, or NC) .................................................................................................................................. 13
Control Voltage Bandwidth ................................................................................................................................................. 16
Pull Range and Absolute Pull Range .................................................................................................................................. 18
Output Frequency ............................................................................................................................................................... 19
I
2
C Control Registers .......................................................................................................................................................... 21
Serial Interface Configuration Description .......................................................................................................................... 24
Serial Signal Format ........................................................................................................................................................... 24
Parallel Signal Format ........................................................................................................................................................ 25
Parallel Data Format ........................................................................................................................................................... 25
I
2
C Timing Specification ...................................................................................................................................................... 27
I
2
C Device Address Modes ................................................................................................................................................. 28
Schematic Example ............................................................................................................................................................ 29
Dimensions and Patterns ........................................................................................................................................................... 30
Additional Information ................................................................................................................................................................ 32
Revision History ......................................................................................................................................................................... 33
Rev 1.00
Page 3 of 33
www.sitime.com
SiT5147
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Endura™ Series Super-TCXO
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3 V Vdd.
Table 1. Output Characteristics
Parameters
Nominal Output Frequency Range
Symbol
F_nom
Min.
60.000001
208
Operating Temperature Range
T_use
-20
-40
-40
Acceleration (g) sensitivity, Gamma
Vector
F_g
–
–
Typ.
–
–
–
–
–
Max.
189
220
+70
+85
+105
Unit
MHz
MHz
°C
°C
°C
Extended Commercial, ambient temperature
Industrial, ambient temperature
Extended Industrial, ambient temperature
Ultra-low sensitivity grade; total gamma over 3 axes; 15 Hz
to 2 kHz; MIL-PRF-55310, computed per section 4.8.18.3.1
Low sensitivity grade; total gamma over 3 axes; 15 Hz to
2 kHz; MIL-PRF-55310, computed per section 4.8.18.3.1
Referenced to (max frequency + min frequency)/2 over the
rated temperature range. Vc=Vdd/2 for VCTCXO
Condition
Frequency Coverage
Temperature Range
Rugged Characteristics
0.004
–
0.009
0.1
ppb/g
ppb/g
Frequency Stability
Frequency Stability over
Temperature
F_stab
–
–
–
Initial Tolerance
Supply Voltage Sensitivity
F_init
F_Vdd
–
–
–
–
Output Load Sensitivity
F_load
–
–
–
Frequency vs. Temperature Slope
ΔF/ΔT
–
–
–
Dynamic Frequency Change during
Temperature Ramp
F_dynamic
–
–
–
One-Year Aging
20-Year Aging
F_1y
F_20y
–
–
–
–
–
–
±11.0
±18.3
±43.9
±3.1
±5.08
±12.2
±15
±25
±60
±0.13
±0.21
±0.50
±1
±2
±0.5
±1.0
±2.5
±1
±26.0
±52
±104.0
±10.5
±21.0
±42.0
±25
±50
±100
±0.21
±0.42
±0.83
–
–
ppm
ppm
ppm
ppm
ppb
ppb
ppb
ppb
ppb
ppb
ppb/°C
ppb/°C
ppb/°C
ppb/s
ppb/s
ppb/s
ppm
ppm
Initial frequency at 25°C at 48 hours after 2 reflows
±0.5 ppm F_stab, Vdd ±5%
±1.0 ppm F_stab, Vdd ±5%
±2.5 ppm F_stab, Vdd ±5%
±0.5 ppm F_stab. LVCMOS output, 15 pF ±10%
±1.0 ppm F_stab. LVCMOS output, 15 pF ±10%
±2.5 ppm F_stab. LVCMOS output, 15 pF ±10%
±0.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C
±1.0 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C
±2.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C
±0.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C
±1.0 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C
±2.5 ppm F_stab, 0.5°C/min ramp rate, -40 to 105°C
At 25°C, after 2-days of continued operation. Aging is
measured with respect to day 3
At 25°C, after 2-days of continued operation. Aging is
measured with respect to day 3
60 to 150 MHz
150 to 189 MHz, 200 to 220 MHz
10% - 90% Vdd
IOH = +3 mA
IOL = -3 mA
Impedance looking into output buffer, Vdd = 3.3 V
Impedance looking into output buffer, Vdd = 3.0 V
Impedance looking into output buffer, Vdd = 2.8 V
Impedance looking into output buffer, Vdd = 2.5 V
Time to first pulse, measured from the time Vdd reaches
90% of its final value. Vdd ramp time = 100 µs from 0 V to
Vdd
See
Timing Diagrams
section below.
Time to first accurate pulse within rated stability, measured
from the time Vdd reaches 90% of its final value. Vdd
ramp time = 100 µs
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Output Impedance
DC
Tr, Tf
VOH
VOL
Z_out_c
45
42
0.8
90%
–
–
–
–
–
Start-up Time
T_start
–
–
–
1.2
–
–
17
17
18
19
2.5
55
55
1.9
–
10%
–
–
–
–
3.5
%
%
ns
Vdd
Vdd
Ohms
Ohms
Ohms
Ohms
ms
Start-up Characteristics
Output Enable Time
Time to Rated Frequency Stability
T_oe
T_stability
–
–
–
5
285
45
ns
ms
Rev 1.00
Page 4 of 33
www.sitime.com
SiT5147
60 MHz to 220 MHz, ±0.5 to ±2.5 ppm, Endura™ Series Super-TCXO
Table 2. DC Characteristics
Parameters
Supply Voltage
Symbol
Vdd
Min.
2.25
2.52
2.7
2.97
Current Consumption
OE Disable Current
Idd
I_od
–
–
–
–
Typ.
2.5
2.8
3.0
3.3
48
52
45
49
Max.
2.75
3.08
3.3
3.63
62
66
52
56
Unit
V
V
V
V
mA
mA
mA
mA
F_nom = 100 MHz, No Load, TCXO and DCTCXO modes
F_nom = 100 MHz, No Load, VCTCXO mode
OE = GND, output weakly pulled down. TCXO, DCTCXO
OE = GND, output weakly pulled down. VCTCXO mode
Condition
Contact
SiTime
for 2.25 V to 3.63 V continuous supply
voltage support
Supply Voltage
Current Consumption
Table 3. Input Characteristics
Parameters
Input Impedance
Input High Voltage
Input Low Voltage
Symbol
Z_in
VIH
VIL
Min.
75
70%
–
±6.25
±6.25
±10
±12.5
±25
±50
±80
±100
±125
±150
±200
±400
±600
±800
±1200
±1600
±3200
±2.75
±2.25
±0.75
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Frequency Control Polarity
Pull Range Linearity
Bus Speed
Input Voltage Low
Input Voltage High
Output Voltage Low
Input Leakage current
Input Capacitance
VC_U
VC_L
VC_z
VC_bw
F_pol
PR_lin
I
2
C
F_I2C
VIL_I2C
VIH_I2C
VOL_I2C
I
L
C
IN
–
70%
–
0.5
–
–
90%
–
8
–
Typ.
–
–
–
–
Max.
–
–
30%
–
Unit
kΩ
Vdd
Vdd
ppm
VCTCXO mode; contact
SiTime
for ±12.5 and ±25 ppm
Internal pull up to Vdd
Condition
Input Characteristics
–
OE Pin
Frequency Tuning Range – Voltage Control or I
2
C mode
Pull Range
PR
–
–
ppm
DCTCXO mode
Absolute Pull Range
[3]
APR
–
–
–
–
–
–
10
Positive
0.5
≤ 400
≤ 1000
–
–
–
–
–
–
–
–
–
10%
–
–
1.0
ppm
ppm
ppm
Vdd
Vdd
MΩ
kHz
%
kHz
kHz
±0.5 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm
±1.0 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm
±2.5 ppm F_stab, DCTCXO, VCTCXO for PR = ±6.25 ppm
VCTCXO mode
VCTCXO mode
VCTCXO mode
VCTCXO mode; contact
SiTime
for other bandwidth options
VCTCXO mode
VCTCXO mode
-40 to 105°C
-40 to 85°C
DCTCXO mode
DCTCXO mode
DCTCXO mode
0.1 V
DD
< VOUT < 0.9 V
DD.
Includes typical leakage current
from 200 kΩ pull resister to VDD; DCTCXO mode
DCTCXO mode
Interface Characteristics, 200 Ohm, 550 pF (Max I
2
C Bus Load)
30%
–
0.4
24
5
Vdd
Vdd
V
µA
pF
Note:
3. APR = PR – initial tolerance – 20-year aging – frequency stability over temperature. Refer to
Central topic: How to call dll under wince. Vs2005 makes a smart device DLL. After making it, copy the Lib file to the directory of the calling program project TestDll, put the DLL file (.lib and .dll...
On Wednesday, July 22, 2009, a total solar eclipse will occur in Asia and the Pacific. In about 5 hours, the eclipse belt will sweep across the Eastern Hemisphere. The shadow of the moon will first fa...
[i=s]This post was last edited by 574433742 on 2015-8-24 14:10[/i] [align=center][b] Sparks collide in communication, [/b][/align] [align=center][b] Ideas are generated in communication. [/b][/align] ...
High efficiency and low standby power consumption are two major challenges in today's switching power supply design. Resonant topology or LLC topology is becoming increasingly popular because it ca...[Details]
Traditional broadcasting systems generally need to be operated manually at a fixed time, and can only realize one-way broadcasting with few functions. Traditional bell ringing equipment has a singl...[Details]
1. Overview
Will passive devices
produce nonlinear intermodulation distortion? The answer is yes! Although there is no systematic theoretical analysis, it has been found in engineerin...[Details]
1. Circuit composition
The whole circuit consists of two parts:
1. Power saving control circuit
As shown in the figure below. Including delay circuit and drive circuit.
(1) Delay ci...[Details]
Google's driverless technology is not only an eye-catching technology, but also a subversion of the car usage model.
Those who have watched anti-terrorism films and TV dramas must have been im...[Details]
China's new energy vehicles are in a transition period from research and development to real industrial development. In 2012, with the intensive launch of new energy vehicle policy planning, the de...[Details]
1. Introduction
With the growth of parking demand, the scale of parking lots is becoming larger and larger. A lot of research has been done on intelligent parking lots in China, but most of th...[Details]
Converged processors meet scalability requirements
In current embedded system design, solutions based on MCU, DSP, FPGA and ASIC account for more than 90% of the market share. These solutions ...[Details]
In this article, the high-performance DSP developed by TI can be used as an effective confidentiality method if it is applied to PC encryption cards.
As an effective network security solution,...[Details]
1 Introduction
With the acceleration of the pace of urban modernization, society has higher requirements for urban road lighting and urban lighting projects. The state has clearly required tha...[Details]
To differentiate their products in a crowded and competitive market, manufacturers of handheld devices often consider battery life and power management as key selling points for cell phones, PDAs, ...[Details]
July 11, 2012, Beijing - Altera Corporation (NASDAQ: ALTR) today announced the launch of 40-Gbps Ethernet (40GbE) and 100-Gbps Ethernet (100GbE) intellectual property (IP) core products. These core...[Details]
With the development and widespread application of computer technology, especially in the field of industrial control, computer communication is particularly important. Although serial communication g...[Details]
Contact resistance
is the resistance to current flow through a closed pair of contacts. This type of measurement is performed on devices such as connectors,
relays
, and switches. The...[Details]
Overview
As a remote network communication control method with advanced technology, high reliability, complete functions and reasonable cost, CAN-bus has been widely used in various automa...[Details]