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BF2030E6433

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size215KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BF2030E6433 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN

BF2030E6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-143
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
Maximum drain current (Abs) (ID)0.04 A
Maximum drain current (ID)0.04 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
Minimum power gain (Gp)20 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BF2030...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
Drain
AGC
HF
Input
G2
G1
R
G1
V
GG
HF Output
+ DC
GND
EHA07461
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin
H
uman
B
ody
M
odel
Type
Package
Pin Configuration
Marking
BF2030
BF2030R
BF2030W
Maximum Ratings
Parameter
SOT143
SOT143R
SOT343
1= S
1= D
1= D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
NDs
NDs
NDs
Symbol
V
DS
I
D
±I
G1/2SM
+V
G1SE
P
tot
Value
8
40
10
6
200
200
Unit
V
mA
V
mW
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
S
76 °C, BF2030, BF2030R
T
S
94 °C, BF2030W
Storage temperature
Channel temperature
T
stg
T
ch
-55 ... 150
150
°C
1
Sep-29-2004

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Description RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143R, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143R, 4 PIN RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code SOT-143 SOT-143 SC-82 SOT-143 SOT-143 SC-82
package instruction SMALL OUTLINE, R-PDSO-G4 SOT-143, 4 PIN SOT-343, 4 PIN SOT-143R, 4 PIN SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4 4 4 4 4
Reach Compliance Code compli unknown unknown unknown compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 10 V 10 V 10 V 10 V 10 V 10 V
Maximum drain current (Abs) (ID) 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A
Maximum drain current (ID) 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Minimum power gain (Gp) 20 dB 20 dB 20 dB 20 dB 20 dB 20 dB
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 -
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