BF2030WE6327 datasheet, PDF - EEWORLD Datasheet

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BF2030WE6327: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size215KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BF2030WE6327 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN

BF2030WE6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SC-82
package instruction	SOT-343, 4 PIN
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	10 V
Maximum drain current (Abs) (ID)	0.04 A
Maximum drain current (ID)	0.04 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Minimum power gain (Gp)	20 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BF2030...

Silicon N-Channel MOSFET Tetrode

•

For low noise, high gain controlled

input stages up to 1GHz

•

Operating voltage 5V

Drain

AGC

Input

HF Output

+ DC

GND

EHA07461

ESD

lectro

tatic

ischarge sensitive device, observe handling precaution!

Class 2 (2000V - 4000V) pin to pin

uman

ody

odel

Type

Package

Pin Configuration

Marking

BF2030

BF2030R

BF2030W

Maximum Ratings

Parameter

SOT143

SOT143R

SOT343

1= S

1= D

2=D

2=S

3=G2

3=G1

4=G1

4=G2

NDs

Symbol

±I

G1/2SM

G1SE

tot

Value

200

Unit

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

≤

76 °C, BF2030, BF2030R

≤

94 °C, BF2030W

Storage temperature

Channel temperature

stg

-55 ... 150

150

°C

Sep-29-2004

BF2030WE6327 Related Products

	BF2030WE6327	BF2030E6433	BF2030E6327	BF2030RE6327	BF2030RE6433	BF2030WE6433
Description	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143R, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143R, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	SC-82	SOT-143	SOT-143	SOT-143	SOT-143	SC-82
package instruction	SOT-343, 4 PIN	SMALL OUTLINE, R-PDSO-G4	SOT-143, 4 PIN	SOT-143R, 4 PIN	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4	4	4	4
Reach Compliance Code	unknown	compli	unknown	unknown	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	10 V	10 V	10 V	10 V	10 V	10 V
Maximum drain current (Abs) (ID)	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A
Maximum drain current (ID)	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Minimum power gain (Gp)	20 dB	20 dB	20 dB	20 dB	20 dB	20 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	-

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